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参数资料
| 型号： | R1LV0416DSB-7LI |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 4M SRAM (256-kword 】 16-bit) |
| 中文描述： | 4分的SRAM（256 - KWord的】16位） |
| 文件页数： | 1/17页 |
| 文件大小： | 168K |
| 代理商： | R1LV0416DSB-7LI |
Rev.1.00, May.24.2007, page 1 of 15
R1LV0416D Series
4M SRAM (256-kword
×
16-bit)
REJ03C0311-0100
Rev.1.00
May.24.2007
Description
The R1LV0416D is a 4-Mbit static RAM organized 256-kword
×
16-bit, fabricated by Renesas's high-performance 0.15
μ
m
CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power
consumption. The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery
backup systems. The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch
ball grid array.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 55/70 ns (max)
Power dissipation:
Standby: 3
μ
W (typ) (V
CC
= 3.0 V)
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
Temperature Range: -40 to +85
°
C
相关PDF资料 |
PDF描述 |
|---|---|
| R1LV1616H-I | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-4LI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-4SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-5SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HBG-4SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1LV0416DSB-7LI#B0 | 功能描述:IC SRAM 44TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6 |
| R1LV0416DSB-7LI#S0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 44-Pin TSOP-II 制造商:Renesas Electronics Corporation 功能描述:256KX16, IND TEMP, 4MB SLOW ASYNC SRAM - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:IC SRAM 4MBIT 70NS 48FBGA 制造商:Renesas Electronics Corporation 功能描述:R1LV0416D Series 4-Mbit (256 K x 16 ) 3 V 70 ns Advanced SRAM-TSOPII-44 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 44-Pin TSOP-II |
| R1LV0416DSB-7LIB0 | 制造商:Renesas Electronics Corporation 功能描述:Low Power SRAM.4M,x16,70ns,TSOP44 |
| R1LV0808ASB-5SI | 制造商:Renesas Electronics Corporation 功能描述:SRAM 8MBIT 3V 55NS 44TSOP 制造商:Renesas Electronics Corporation 功能描述:SRAM, 8MBIT, 3V, 55NS, 44TSOP 制造商:Renesas Electronics Corporation 功能描述:SRAM, 8MBIT, 3V, 55NS, 44TSOP; Memory Size:8Mbit; Memory Configuration:1024K x 8; Supply Voltage Min:2.4V; Supply Voltage Max:3.6V; Memory Case Style:TSOPII; No. of Pins:44; Access Time:55ns; Operating Temperature Min:-40C; ;RoHS Compliant: Yes |
| R1LV0808ASB-5SI#B0 | 功能描述:IC SRAM 44TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
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