参数资料
型号: R1LV1616RSD-7SI
厂商: Renesas Technology Corp.
英文描述: 16Mb superSRAM (1M wordx16bit)
中文描述: 16Mb的superSRAM(100万wordx16bit)
文件页数: 7/16页
文件大小: 122K
代理商: R1LV1616RSD-7SI
R1LV1616R Series
Rev.1.00
2004.04.13
page 7 of 16
Capacitance
AC Characteristics
Input pulse levels: VIL= 0.4V,VIH=2.4V
Input rise and fall time : 5ns
Input and output timing reference levels : 1.4V
Output load : See figures (Including scope and jig)
Note 1:This parameter is sampled and not 100% tested.
1
V
I/O
= 0V
pF
10
-
-
C
I/O
Input / output capacitance
1
V in = 0V
pF
10
-
-
C in
Input capacitance
Note
Test conditions
Unit
Max.
Typ.
Min.
Symbol
Parameter
(Ta = +25oC, f =1MHz)
CL=30pF
RL=500
DQ
1.4V
Test Conditions (Vcc=2.7~3.6V, Ta = 0~+70oC / -20~+85oC / -40~+85oC *)
Note: Temperature range depends on R/W/I-version. Please see table on page 2.
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