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参数资料
| 型号： | R1LV1616RSD-8SW |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 16Mb superSRAM (1M wordx16bit) |
| 中文描述： | 16Mb的superSRAM（100万wordx16bit） |
| 文件页数： | 5/16页 |
| 文件大小： | 122K |
| 代理商： | R1LV1616RSD-8SW |
R1LV1616R Series
Rev.1.00
2004.04.13
page 5 of 16
Note 1. -2.0V in case of AC (Pulse width
≤
30ns)
2. Maximum voltage is +4.6V
Note 1. H:VIH L:VIL X: VIH or VIL
2. BYTE# pin supported by only TSOP type. When apply BYTE# =“L” , please assign LB#=UB#=“L”.
Operating Table
Absolute Maximum Ratings
Read
A-1
High-Z
Dout
L
H
L
L
L
H
L
Write
A-1
High-Z
Din
X
L
L
L
L
H
L
Read
Dout
Dout
Dout
L
H
L
L
H
H
L
Write
Din
Din
Din
X
L
L
L
H
H
L
Read from upper byte
Dout
Dout
High-Z
L
H
L
H
H
H
L
Write in upper byte
Din
Din
High-Z
X
L
L
H
H
H
L
Output disable
High-Z
High-Z
High-Z
H
H
X
X
X
H
L
Read from lower byte
High-Z
High-Z
Dout
L
H
H
L
H
H
L
Write in lower byte
High-Z
High-Z
Din
X
L
H
L
H
H
L
Stand by
High-Z
High-Z
High-Z
X
X
H
H
H
X
X
Stand by
High-Z
High-Z
High-Z
X
X
X
X
X
L
X
Stand by
High-Z
High-Z
High-Z
X
X
X
X
X
X
H
Operation
DQ15
DQ8-14
DQ0-7
OE#
WE#
UB#
LB#
BYTE#
CS2
CS1#
-40 to +85
-20 to +85
0 to +70
oC
I ver.
oC
W ver.
-40 to +85
-20 to +85
0 to +70
oC
I ver.
oC
W ver.
oC
R ver.
Tbias
Storage temperature range under bias
oC
-65 to +150
Tstg
Storage temperature
oC
R ver.
Topr
Operation temperature
W
0.7
P
T
Power dissipation
V
-0.5*
1
to Vcc+0.3*
2
V
T
Terminal voltage on any pin relation toVss
V
-0.5 to +4.6
Vcc
Power supply voltage relative to Vss
Unit
Value
Symbol
Parameter
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