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参数资料
| 型号： | R1LV1616RSD-8SW |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 16Mb superSRAM (1M wordx16bit) |
| 中文描述： | 16Mb的superSRAM（100万wordx16bit） |
| 文件页数： | 6/16页 |
| 文件大小： | 122K |
| 代理商： | R1LV1616RSD-8SW |
R1LV1616R Series
Rev.1.00
2004.04.13
page 6 of 16
Note 1. Typical parameter indicates the value for the center of distribution at 3.0V (Ta= 25
oC
), and not 100% tested.
2. BYTE# pin supported by only TSOP type.
BYTE#
≥
Vcc-0.2V or BYTE#
≤
0.2V
Recommended Operating Conditions
DC Characteristics
I ver.
W ver.
R ver.
2
oC
+85
-
-40
2
oC
+85
-
-20
2
oC
+70
-
0
Ta
Ambient temperature range
1
V
0.4
-
-0.2
V
IL
Input low voltage
V
Vcc+0.2
-
2.4
V
IH
Input high voltage
V
0
0
0
Vss
V
3.6
3.0
2.7
Vcc
Supply voltage
Note
Unit
Max.
Typ.
Min.
Symbol
Parameter
~+85oC
μA
40
-
-
I
OL
= 2mA
V
0.4
-
-
V
OL
Output Low voltage
I
OH
= -1mA
V
-
-
2.4
V
OH
Output hige voltage
V in
≥
0V
(1) 0V
≤
CS2
≤
0.2V or
(2) CS2
≥
Vcc-0.2V,
CS1#
≥
Vcc-0.2V or
(3)LB# =UB#
≥
Vcc-0.2V,
CS2
≥
Vcc-0.2V,
CS1#
≤
0.2V
Average value
~+70oC
μA
25
-
-
~+40oC
μA
12
4
-
~+25oC
μA
6
2
-
I
SB1
Standby current
CS2=V
IL
mA
0.3
0.1
-
I
SB
Standby current
mA
15
10
-
Icc
2
Read
Cycle time = 1 μs,
I
I/O
= 0 mA,
CS1#
≤
0.2V, CS2
≥
V
CC
-0.2V
V
IH
≥
V
CC
-0.2V , V
IL
≤
0.2V,
Write & Read duty=100%
respectively
mA
20
15
-
Icc
2
Write
Min. cycle, duty =100%
I
I/O
= 0 mA, CS1# =V
IL
,
CS2=V
IH
Others = V
IH
/ V
IL
mA
55
45
-
Icc
1
Average operating
current
CS1# =V
IH or
CS2=V
IL or
OE# = V
IH
or WE# =V
IL
or
LB# =UB# =V
IH,
V
I/O
=Vss to Vcc
μA
1
-
-
|I
Lo
|
Output leakage current
Vin=Vss to Vcc
μA
1
-
-
|I
LI
|
Input leakage current
Test conditions
*2
Unit
Max.
Typ.
*1
Min.
Symbol
Parameter
Note 1. –2.0V in case of AC (Pulse width
≤
30ns)
2. Ambient
temperature range depends on R/W/I-version. Please see table on page 2.
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