参数资料
型号: R1Q2A3618ABG-40R
厂商: Renesas Technology Corp.
英文描述: 36-Mbit QDR™II SRAM 2-word Burst
文件页数: 5/25页
文件大小: 394K
代理商: R1Q2A3618ABG-40R
R1Q2A3636/R1Q2A3618/R1Q2A3609
Name
V
DD
I/O type
Supply
Descriptions
Notes
Power supply: 1.8 V nominal. See DC Characteristics and Operating V
DD
Supply
Conditions for range.
Power supply: Isolated output buffer supply. Nominally 1.5 V. 1.8 V is also permissible.
See DC Characteristics and Operating Conditions for range.
Power supply: Ground.
HSTL input reference voltage: Nominally V
DDQ
/2, but may be adjusted to improve
system noise margin. Provides a reference voltage for the HSTL input buffers.
No connect: These signals are not internally connected. These signals can be left
floating or connected to ground to improve package heat dissipation.
Notes: 1. All power supply and ground balls must be connected for proper operation of the device.
V
DDQ
Supply
V
SS
V
REF
Supply
NC
Block Diagram
(R1Q2A3636 / R1Q2A3618 / R1Q2A3609 series)
Address
Registry
and
Logic
Data
Registry
and
Logic
Memory
Array
W
R
Address
/R
/W
K
/K
/W
/BWx
D
(Data in)
/R
K
/K
72
/36
/18
O
R
72
/36
/18
O
S
O
B
19/20/21
36/18/9
36/18/9
Q
(Data out)
W
S
19/20/21
K
C
C, /C
or
K, /K
ZQ
2
CQ
/CQ
M
72
/36
/18
4/2/1
REJ03C0294-0003 Rev.0.03 Jul. 31, 2007
Page 5 of 23
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相关代理商/技术参数
参数描述
R1Q2A3618ABG40RB0 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst
R1Q2A3618ABG40RS0 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst
R1Q2A3618ABG40RT0 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst
R1Q2A3618ABG-50R 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR™II SRAM 2-word Burst
R1Q2A3618ABG50RB0 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst