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参数资料
| 型号： | R1Q2A3636ABG-40R |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 36-Mbit QDR™II SRAM 2-word Burst |
| 文件页数： | 12/25页 |
| 文件大小： | 394K |
| 代理商： | R1Q2A3636ABG-40R |
R1Q2A3636/R1Q2A3618/R1Q2A3609
Parameter
Symbol
I
LI
I
LO
V
OH
(Low)
V
OH
V
OL
(Low)
V
OL
Min
2
5
Max
2
5
V
DDQ
Unit
μA
μA
V
V
V
V
Test conditions
|I
OH
|
≤
0.1 mA
Note 6
I
OL
≤
0.1 mA
Note 7
Notes
10
11
8, 9
8, 9
8, 9
8, 9
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Notes: 1. All inputs (except ZQ, V
REF
) are held at either V
IH
or V
IL
.
2. I
OUT
= 0 mA. V
DD
= V
DD
max, t
KHKH
= t
KHKH
min.
3. Operating supply currents are measured at 100% bus utilization.
4. All address / data inputs are static at either V
IN
> V
IH
or V
IN
< V
IL
.
5. NOP currents are valid when entering NOP after all pending READ and WRITE cycles are completed.
6. Outputs are impedance-controlled. |I
OH
| = (V
DDQ
/2)/(RQ/5) for values of 175
≤
RQ
≤
350
.
7. Outputs are impedance-controlled. I
OL
= (V
DDQ
/2)/(RQ/5) for values of 175
≤
RQ
≤
350
.
8. AC load current is higher than the shown DC values. AC I/O curves are available upon request.
9. HSTL outputs meet JEDEC HSTL Class I standards.
10. 0
≤
V
IN
≤
V
DDQ
for all input balls (except V
REF
, ZQ, TCK, TMS, TDI ball).
11. 0
≤
V
OUT
≤
V
DDQ
(except TDO ball), output disabled.
Thermal Resistance
V
DDQ
0.2
V
DDQ
/2
0.08
V
SS
V
DDQ
/2
0.08
V
DDQ
/2 +0.08
0.2
V
DDQ
/2 +0.08
Parameter
Symbol
θ
JA
θ
JC
Typ
24.5
5.6
Unit
°
C/W
°
C/W
Notes
Junction to Ambient
Junction to Case
Note: These parameters are calculated under the condition of wind velocity = 1 m/s.
Capacitance
(Ta = +25°C, f=1.0MHz, V
DD
= 1.8V, V
DDQ
= 1.5V)
Typ
Max
Unit
2
3
pF
2
3
pF
3
4.5
pF
Parameter
Symbol
C
IN
C
CLK
C
I/O
Min
Test conditions
V
IN
= 0 V
V
CLK
= 0 V
V
I/O
= 0 V
Notes
1, 2
1, 2
1, 2
Input capacitance
Clock input capacitance
Input/output capacitance (D, Q, ZQ)
Notes: 1. These parameters are sampled and not 100% tested.
2. Except JTAG (TCK, TMS, TDI, TDO) pins.
AC Test Conditions
(Ta = 0 to +70°C, V
DD
= 1.8V ±0.1V)
Input waveform (Rise/fall time
≤
0.3 ns)
1.25 V
0.25 V
0.75 V
0.75 V
Test points
REJ03C0294-0003 Rev.0.03 Jul. 31, 2007
Page 12 of 23
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相关代理商/技术参数 |
参数描述 |
|---|---|
| R1Q2A3636ABG40RB0 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q2A3636ABG40RS0 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q2A3636ABG40RT0 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q2A3636ABG-50R | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR™II SRAM 2-word Burst |
| R1Q2A3636ABG50RB0 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
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