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参数资料
| 型号： | R1Q3A3636ABG-30R |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 36-Mbit QDR™II SRAM 4-word Burst |
| 文件页数： | 13/26页 |
| 文件大小： | 407K |
| 代理商： | R1Q3A3636ABG-30R |
R1Q3A3636/R1Q3A3618/R1Q3A3609
Output load condition
50
0.75 V
ZQ
Q
V
REF
250
Z
0
= 50
SRAM
V
DDQ
/2
AC Operating Conditions
Parameter
Symbol
V
IH (AC)
V
IL (AC)
Min
Typ
Max
Unit
V
V
Notes
Input high voltage
Input low voltage
Notes: 1. All voltages referenced to V
SS
(GND).
2. These conditions are for AC functions only, not for AC parameter test.
3. Overshoot: V
IH (AC)
≤
V
DDQ
+ 0.5 V for t
≤
t
KHKH
/2
Undershoot: V
IL (AC)
≥
0.5 V for t
≤
t
KHKH
/2
Power-up: V
IH
≤
V
DDQ
+ 0.3 V and V
DD
≤
1.7 V and V
DDQ
≤
1.4 V for t
≤
200 ms
During normal operation, V
DDQ
must not exceed V
DD
. Control input signals may not have pulse widths less
than t
KHKL
(min) or operate at cycle rates less than t
KHKH
(min).
4. To maintain a valid level, the transitioning edge of the input must:
a. Sustain a constant slew rate from the current AC level through the target AC level, V
IL (AC)
or V
IH (AC)
.
b. Reach at least the target AC level.
c. After the AC target level is reached, continue to maintain at least the target DC level, V
IL (DC)
or V
IH (DC)
.
V
REF
+ 0.2
1, 2, 3, 4
1, 2, 3, 4
V
REF
0.2
REJ03C0295-0003 Rev.0.03 Jul. 31, 2007
Page 13 of 24
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| R1Q3A3636ABG-33R | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR™II SRAM 4-word Burst |
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| R1Q3A3636ABG40RB0 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
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