参数资料
型号: R1RP0404DGE-2LR
厂商: Renesas Technology Corp.
英文描述: 4M High Speed SRAM (1-Mword 】 4-bit)
中文描述: 4分高速SRAM(1 - Mword】4位)
文件页数: 1/13页
文件大小: 88K
代理商: R1RP0404DGE-2LR
Rev.1.00, Mar.12.2004, page 1 of 11
R1RP0404D Series
4M High Speed SRAM (1-Mword
×
4-bit)
REJ03C0116-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword
×
4-bit. It has realized high speed
access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing
technology. It is most appropriate for the application which requires high speed and high density memory,
such as cache and buffer memory in system. The R1RP0404D is packaged in 400-mil 32-pin SOJ for high
density surface mounting.
Features
Single 5.0 V supply: 5.0 V
±
10%
Access time 12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 130 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current : 5 mA (max)
: 1.0 mA (max) (L-version)
Data retention current: 0.5 mA (max) (L-version)
Data retention voltage: 2.0 V (min) (L-version)
Center V
CC
and V
SS
type pin out
相关PDF资料
PDF描述
R1RP0404DGE-2PR 4M High Speed SRAM (1-Mword 】 4-bit)
R1RW0404D 4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
R1RW0404DGE-2LR 4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
R1RW0404DGE-2PR 4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
R1RW0408D 4M High Speed SRAM (512-kword x 8-bit)
相关代理商/技术参数
参数描述
R1RP0404DGE-2LR#B0 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 5V 4M-Bit 1M x 4-Bit 12ns 32-Pin SOJ Tube
R1RP0404DGE-2PR 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:4M High Speed SRAM (1-Mword 】 4-bit)
R1RP0404DGE-2PR#B0 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 5V 4M-Bit 1M x 4-Bit 12ns 32-Pin SOJ Tube
R1RP0408D 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:4M High Speed SRAM (512-kword ?8-bit)
R1RP0408DGE-0PR#B0 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:0