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参数资料
| 型号： | R1RP0404DGE-2LR |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 4M High Speed SRAM (1-Mword 】 4-bit) |
| 中文描述： | 4分高速SRAM（1 - Mword】4位） |
| 文件页数： | 6/13页 |
| 文件大小： | 88K |
| 代理商： | R1RP0404DGE-2LR |
R1RP0404D Series
Rev.1.00, Mar.12.2004, page 6 of 11
AC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 5.0 V
±
10%, unless otherwise noted.)
Test Conditions
Input pulse levels: 3.0 V/0.0 V
Input rise and fall time: 3 ns
Input and output timing reference levels: 1.5 V
Output load: See figures (Including scope and jig)
D
OUT
255
480
5 V
5 pF
Output load (B)
(for t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
WHZ
, and t
OW
)
Output load (A)
1.5 V
30 pF
D
OUT
RL = 50
Zo = 50
Read Cycle
R1RP0404D
-2
Parameter
Symbol
Min
Max
Unit
Notes
Read cycle time
t
RC
t
AA
t
ACS
t
OE
t
OH
t
CLZ
t
OLZ
t
CHZ
t
OHZ
12
3
12
ns
Address access time
ns
Chip select access time
12
ns
Output enable to output valid
6
6
ns
Output hold from address change
ns
Chip select to output in low-Z
3
ns
1
Output enable to output in low-Z
0
ns
1
Chip deselect to output in high-Z
ns
1
Output disable to output in high-Z
6
ns
1
相关PDF资料 |
PDF描述 |
|---|---|
| R1RP0404DGE-2PR | 4M High Speed SRAM (1-Mword 】 4-bit) |
| R1RW0404D | 4M HIGH SPEED SRAM (1-MWORD X 4-BIT) |
| R1RW0404DGE-2LR | 4M HIGH SPEED SRAM (1-MWORD X 4-BIT) |
| R1RW0404DGE-2PR | 4M HIGH SPEED SRAM (1-MWORD X 4-BIT) |
| R1RW0408D | 4M High Speed SRAM (512-kword x 8-bit) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1RP0404DGE-2LR#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 5V 4M-Bit 1M x 4-Bit 12ns 32-Pin SOJ Tube |
| R1RP0404DGE-2PR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:4M High Speed SRAM (1-Mword 】 4-bit) |
| R1RP0404DGE-2PR#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 5V 4M-Bit 1M x 4-Bit 12ns 32-Pin SOJ Tube |
| R1RP0408D | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:4M High Speed SRAM (512-kword ?8-bit) |
| R1RP0408DGE-0PR#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:0 |
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