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参数资料
| 型号： | R1RW0408DGE-2LR |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 4M High Speed SRAM (512-kword x 8-bit) |
| 中文描述： | 4分高速SRAM（512 - KWord的× 8位） |
| 文件页数： | 11/14页 |
| 文件大小： | 86K |
| 代理商： | R1RW0408DGE-2LR |
R1RW0408D Series
Rev.1.00, Mar.12.2004, page 11 of 12
Write Timing Waveform (2)
(CS# Controlled)
Address
WE# *
3
D
OUT
D
IN
t
WC
t
WP
t
WR
t
CW
t
DW
t
DH
Valid address
t
AW
Valid data
t
AS
CS# *
3
t
WHZ
t
OW
*
4
*
4
High impedance*
5
相关PDF资料 |
PDF描述 |
|---|---|
| R1RW0408DGE-2PR | 4M High Speed SRAM (512-kword x 8-bit) |
| R1RW0416D | 4M High Speed SRAM (256-kword x 16-bit) |
| R1RW0416DGE-2LR | 4M High Speed SRAM (256-kword x 16-bit) |
| R1RW0416DGE-2PR | 4M High Speed SRAM (256-kword x 16-bit) |
| R1RW0416DSB-2LR | 4M High Speed SRAM (256-kword x 16-bit) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1RW0408DGE-2LR#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 12ns 36-Pin SOJ Tube |
| R1RW0408DGE-2PI | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit) |
| R1RW0408DGE-2PI#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 12ns 36-Pin SOJ Tube |
| R1RW0408DGE-2PR | 制造商:Renesas Electronics Corporation 功能描述:IC,memory,SRAM,4Mb,high speed, |
| R1RW0408DGE-2PR#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 12ns 36-Pin SOJ Tube |
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