参数资料
型号: R1RW0408DGE-2PR
厂商: Renesas Technology Corp.
英文描述: 4M High Speed SRAM (512-kword x 8-bit)
中文描述: 4分高速SRAM(512 - KWord的× 8位)
文件页数: 10/14页
文件大小: 86K
代理商: R1RW0408DGE-2PR
R1RW0408D Series
Rev.1.00, Mar.12.2004, page 10 of 12
Read Timing Waveform (3)
(WE# = V
IH
, CS# = V
IL
, OE# = V
IL
)*
2
Valid data
CS#
D
OUT
High
impedance
High
impedance
t
CLZ
t
ACS
t
RC
t
CHZ
Write Timing Waveform (1)
(WE# Controlled)
Address
WE#*
3
D
OUT
D
IN
t
WC
t
WP
t
WR
t
CW
t
DW
t
DH
Valid address
t
AW
Valid data
t
AS
CS#*
3
t
OHZ
*
4
*
4
OE#
High impedance*
5
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相关代理商/技术参数
参数描述
R1RW0408DGE-2PR#B0 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 12ns 36-Pin SOJ Tube
R1RW0408DI 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
R1RW0416D 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:4M High Speed SRAM (256-kword x 16-bit)
R1RW0416DGE-0PI 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit)
R1RW0416DGE-2LR 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:4M High Speed SRAM (256-kword x 16-bit)