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参数资料
| 型号： | R1RW0416D |
| 厂商： | Renesas Technology Corp. |
| 元件分类： | DRAM |
| 英文描述： | 4M High Speed SRAM (256-kword x 16-bit) |
| 中文描述： | 4分高速SRAM（256 - KWord的x 16位） |
| 文件页数： | 5/16页 |
| 文件大小： | 100K |
| 代理商： | R1RW0416D |
R1RW0416D Series
Rev.1.00, Mar.12.2004, page 5 of 14
Operation Table
CS# OE# WE# LB# UB# Mode
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I/O1
I/O8
I/O9
I/O16
Ref. cycle
H
×
H
×
H
×
×
L
×
×
L
Standby
High-Z
High-Z
Read cycle
L
Output disable
High-Z
High-Z
L
L
H
Read
Output
Output
L
L
H
L
H
Lower byte read I
CC
Upper byte read I
CC
Write
Output
High-Z
Read cycle
L
L
H
H
L
High-Z
Output
Read cycle
Write cycle
L
L
×
×
×
×
H
H
H
I
CC
I
CC
High-Z
High-Z
L
L
L
L
Input
Input
L
L
L
H
Lower byte write I
CC
Upper byte write I
CC
Input
High-Z
Write cycle
L
L
H
L
High-Z
Input
Write cycle
L
Note: H: V
IH
, L: V
IL
,
×
: V
IH
or V
IL
L
H
H
I
CC
High-Z
High-Z
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V
SS
Voltage on any pin relative to V
SS
Power dissipation
V
CC
V
T
P
T
Topr
0.5 to +4.6
0.5
*
1.0
V
1
to V
CC
+ 0.5
*
2
V
W
°
C
°
C
°
C
Operating temperature
0 to +70
55 to +125
10 to +85
Storage temperature
Tstg
Storage temperature under bias
Notes: 1. V
T
(min) =
2.0 V for pulse width (under shoot)
≤
6 ns.
2. V
T
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
≤
6 ns.
Tbias
Recommended DC Operating Conditions
(Ta = 0 to +70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
*
V
SS
*
V
IH
V
IL
3
3.0
3.3
3.6
V
4
0
0
0
V
Input voltage
2.0
0.5
*
V
CC
+ 0.5
*
0.8
2
V
Notes: 1. V
IL
(min) =
2.0 V for pulse width (under shoot)
≤
6 ns.
2. V
IH
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
≤
6 ns.
3. The supply voltage with all V
CC
pins must be on the same level.
4. The supply voltage with all V
SS
pins must be on the same level.
1
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| R1RW0416DGE-0PI | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit) |
| R1RW0416DGE-2LR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:4M High Speed SRAM (256-kword x 16-bit) |
| R1RW0416DGE-2LR#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ Tube |
| R1RW0416DGE-2PI | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit) |
| R1RW0416DGE-2PI#B0 | 制造商:Renesas Electronics Corporation 功能描述:4-MBIT HIGH SPEED STATIC RAM ORGANIZED 256-KWORD ? 16-BIT - Bulk 制造商:Renesas Electronics 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ Tube |
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