参数资料
型号: R1RW0416DSB-2PR
厂商: Renesas Technology Corp.
元件分类: DRAM
英文描述: 4M High Speed SRAM (256-kword x 16-bit)
中文描述: 4分高速SRAM(256 - KWord的x 16位)
文件页数: 7/16页
文件大小: 100K
代理商: R1RW0416DSB-2PR
R1RW0416D Series
Rev.1.00, Mar.12.2004, page 7 of 14
AC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 3.3 V
±
0.3 V, unless otherwise noted.)
Test Conditions
Input pulse levels: 3.0 V/0.0 V
Input rise and fall time: 3 ns
Input and output timing reference levels: 1.5 V
Output load: See figures (Including scope and jig)
Output load (B)
(for t
CLZ
, t
OLZ
, t
BLZ
, t
CHZ
, t
OHZ
,
t
BHZ
, t
WHZ
, and t
OW
)
D
OUT
353
319
3.3 V
5 pF
1.5 V
30 pF
D
OUT
RL = 50
Output load (A)
Zo = 50
Read Cycle
R1RW0416D
-2
Parameter
Symbol
Min
Max
Unit
Notes
Read cycle time
t
RC
t
AA
t
ACS
t
OE
t
BA
t
OH
t
CLZ
t
OLZ
t
BLZ
t
CHZ
t
OHZ
t
BHZ
12
3
12
ns
Address access time
ns
Chip select access time
12
ns
Output enable to output valid
6
ns
Byte select to output valid
6
6
ns
Output hold from address change
ns
Chip select to output in low-Z
3
ns
1
Output enable to output in low-Z
0
ns
1
Byte select to output in low-Z
0
ns
1
Chip deselect to output in high-Z
ns
1
Output disable to output in high-Z
6
ns
1
Byte deselect to output in high-Z
6
ns
1
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