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参数资料
| 型号： | R1RW0416DSB-2PR |
| 厂商： | Renesas Technology Corp. |
| 元件分类： | DRAM |
| 英文描述： | 4M High Speed SRAM (256-kword x 16-bit) |
| 中文描述： | 4分高速SRAM（256 - KWord的x 16位） |
| 文件页数： | 8/16页 |
| 文件大小： | 100K |
| 代理商： | R1RW0416DSB-2PR |
R1RW0416D Series
Rev.1.00, Mar.12.2004, page 8 of 14
Write Cycle
R1RW0416D
-2
Parameter
Symbol
Min
Max
Unit
Notes
Write cycle time
t
WC
t
AW
t
CW
t
WP
t
BW
t
AS
t
WR
t
DW
t
DH
t
OW
t
OHZ
t
WHZ
12
6
ns
Address valid to end of write
8
ns
Chip select to end of write
8
ns
8
Write pulse width
8
ns
7
Byte select to end of write
8
ns
Address setup time
0
ns
5
Write recovery time
0
ns
6
Data to write time overlap
6
ns
Data hold from write time
0
ns
Write disable to output in low-Z
3
ns
1
Output disable to output in high-Z
ns
1
Write enable to output in high-Z
Notes: 1. Transition is measured
±
200 mV from steady voltage with output load (B). This parameter is
sampled and not 100% tested.
2. If the CS# or LB# or UB# low transition occurs simultaneously with the WE# low transition or
after the WE# transition, output remains a high impedance state.
3. WE# and/or CS# must be high during address transition time.
4. If CS#, OE#, LB# and UB# are low during this period, I/O pins are in the output state. Then the
data input signals of opposite phase to the outputs must not be applied to them.
5. t
is measured from the latest address transition to the latest of CS#, WE#, LB# or UB# going
low.
6. t
is measured from the earliest of CS#, WE#, LB# or UB# going high to the first address
transition.
7. A write occurs during the overlap of a low CS#, a low WE# and a low LB# or a low UB# (t
). A
write begins at the latest transition among CS# going low, WE# going low and LB# going low or
UB# going low. A write ends at the earliest transition among CS# going high, WE# going high
and LB# going high or UB# going high.
8. t
CW
is measured from the later of CS# going low to the end of write.
6
ns
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| R1RW0416DSB-2PR#D0 | 制造商:Renesas Electronics Corporation 功能描述:LOW POWER SRAM - Bulk |
| R1RW0416DSB-2PRD0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM, 4Mbit, 256Kx16, 3V, 12ns |
| R1S | 制造商:RECOM 制造商全称:Recom International Power 功能描述:1 Watt SMD Single & Dual Output |
| R1S-0505 | 功能描述:DC/DC转换器 1W DC/DC 1kV UNREG 5Vin 5Vout RoHS:否 制造商:Murata 产品: 输出功率: 输入电压范围:3.6 V to 5.5 V 输入电压（标称）: 输出端数量:1 输出电压（通道 1）:3.3 V 输出电流（通道 1）:600 mA 输出电压（通道 2）: 输出电流（通道 2）: 安装风格:SMD/SMT 封装 / 箱体尺寸: |
| R1S-0505/E | 功能描述:DC/DC转换器 1W 05VIN 05VOUT CONV DC/DC RoHS:否 制造商:Murata 产品: 输出功率: 输入电压范围:3.6 V to 5.5 V 输入电压（标称）: 输出端数量:1 输出电压（通道 1）:3.3 V 输出电流（通道 1）:600 mA 输出电压（通道 2）: 输出电流（通道 2）: 安装风格:SMD/SMT 封装 / 箱体尺寸: |
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