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参数资料
| 型号： | R1WV3216RSD-8SI |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 32Mb superSRAM (2M wordx16bit) |
| 中文描述： | 32兆superSRAM（200万wordx16bit） |
| 文件页数： | 7/16页 |
| 文件大小： | 124K |
| 代理商： | R1WV3216RSD-8SI |
R1W V3216R Series
Rev.1.00
2004.4.13
page 7 of 16
Capacitance
Note 1. This parameter is sampled and not 100% tested.
AC Characteristics
Test Conditions (Vcc=2.7~3.6V, Ta = 0~+70oC / -20~+85oC / -40~+85oC *)
Input pulse levels: VIL= 0.4V,VIH=2.4V
Input rise and fall time : 5ns
Input and output timing reference levels : 1.4V
Output load : See figures (Including scope and jig)
1
V
I/O
= 0V
pF
20
-
-
C
I/O
Input / output capacitance
1
V in = 0V
pF
20
-
-
C in
Input capacitance
Note
Test conditions
Unit
Max.
Typ.
Min.
Symbol
Parameter
(Ta = +25oC, f =1MHz)
CL=30pF
RL=500
DQ
1.4V
Note: Temperature range depends on R/W/I-version. Please see table on page 2.
相关PDF资料 |
PDF描述 |
|---|---|
| R1WV3216RSD-8SR | 32Mb superSRAM (2M wordx16bit) |
| R1WV3216RSD-8SW | 32Mb superSRAM (2M wordx16bit) |
| R200CHX | DISTRIBUTED GATE THYRISTORS |
| R210CHX | DISTRIBUTED GATE THYRISTORS |
| R216CHX | DISTRIBUTED GATE THYRISTORS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1WV3216RSD-8SR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:32Mb Advanced LPSRAM (2M wordx16bit) |
| R1WV3216RSD-8SW | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:32Mb superSRAM (2M wordx16bit) |
| R1WV6416R | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) |
| R1WV6416RBG-5SI | 制造商:Renesas Electronics Corporation 功能描述:SRAM 64MBIT 3V 55NS 48FBGA 制造商:Renesas Electronics Corporation 功能描述:SRAM, 64MBIT, 3V, 55NS, 48FBGA; Memory Size:64Mbit; Memory Configuration:4M x 16bit; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:FBGA; No. of Pins:48; Access Time:55ns; Operating Temperature Min:-40C; ;RoHS Compliant: Yes |
| R1WV6416RBG-5SI#B0 | 制造商:Renesas Electronics Corporation 功能描述:LPSRAM 4M X 16 55NS - Bulk 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 64M-Bit 8M/4M x 8/16-Bit 55ns 48-Pin FBGA Tray |
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