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参数资料
| 型号： | R1WV3216RSD-8SR |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 32Mb superSRAM (2M wordx16bit) |
| 中文描述： | 32兆superSRAM（200万wordx16bit） |
| 文件页数： | 1/16页 |
| 文件大小： | 124K |
| 代理商： | R1WV3216RSD-8SR |
Rev.1.00
2004.4.13
page 1 of 16
REJ03C0215-0100Z
Rev.1.00
2004.4.13
R1WV3216R Series
32Mb superSRAM (2M wordx16bit)
Description
Features
The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and
battery backup are the important design objectives.
The R1WV3216R Series is made by stacked-micro-package technology and two chips of 16Mbit superSRAMs
are assembled in one package.
The R1WV3216R Series is packaged in a 52pin micro thin small outline mount device[
μ
TSOP / 10.79mm x
10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch
of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring
pattern of printed circuit boards.
Single 2.7-3.6V power supply
Small stand-by current:4
μ
A (3.0V, typ.)
Data retention supply voltage =2.0V
No clocks, No refresh
All inputs and outputs are TTL compatible.
Easy memory expansion by CS1#, CS2, LB# and UB#
Common Data I/O
Three-state outputs: OR-tie capability
OE# prevents data contention on the I/O bus
Process technology: 0.15um CMOS
相关PDF资料 |
PDF描述 |
|---|---|
| R1WV3216RSD-8SW | 32Mb superSRAM (2M wordx16bit) |
| R200CHX | DISTRIBUTED GATE THYRISTORS |
| R210CHX | DISTRIBUTED GATE THYRISTORS |
| R216CHX | DISTRIBUTED GATE THYRISTORS |
| R219CHX | DISTRIBUTED GATE THYRISTORS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1WV3216RSD-8SW | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:32Mb superSRAM (2M wordx16bit) |
| R1WV6416R | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) |
| R1WV6416RBG-5SI | 制造商:Renesas Electronics Corporation 功能描述:SRAM 64MBIT 3V 55NS 48FBGA 制造商:Renesas Electronics Corporation 功能描述:SRAM, 64MBIT, 3V, 55NS, 48FBGA; Memory Size:64Mbit; Memory Configuration:4M x 16bit; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:FBGA; No. of Pins:48; Access Time:55ns; Operating Temperature Min:-40C; ;RoHS Compliant: Yes |
| R1WV6416RBG-5SI#B0 | 制造商:Renesas Electronics Corporation 功能描述:LPSRAM 4M X 16 55NS - Bulk 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 64M-Bit 8M/4M x 8/16-Bit 55ns 48-Pin FBGA Tray |
| R1WV6416RBG-5SI#S0 | 制造商:Renesas Electronics Corporation 功能描述:LPSRAM 4M X 16 55NS - Tape and Reel |
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