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参数资料
型号： R5F21334DDFP
元件分类： 微控制器/微处理器
英文描述： 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP32
封装： 7 X 7 MM, 0.80 MM, PLASTIC, LQFP-32
文件页数： 22/45页
文件大小： 414K
代理商： R5F21334DDFP
R8C/33D Group
5. Electrical Characteristics
REJ03B0287-0100 Rev.1.00
Page 29 of 42
Mar 31, 2010
Notes:
1.
VCC = 1.8 V to 5.5 V, Topr =
20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.
2.
This enables the setting errors of bit rates such as 9600 bps and 38400 bps to be 0% when the serial interface is used in
UART mode.
Note:
1.
VCC = 1.8 to 5.5 V, Topr =
20 to 85°C (N version) / 40 to 85°C (D version), unless otherwise specified.
Notes:
1.
The measurement condition is VCC = 1.8 to 5.5 V and Topr = 25
°C.
2.
Waiting time until the internal power supply generation circuit stabilizes during power-on.
Table 5.10
High-speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ.
Max.
–
High-speed on-chip oscillator frequency after
reset
VCC = 1.8 V to 5.5 V
20°C ≤ Topr ≤ 85°C
38.4
40
41.6
MHz
VCC = 1.8 V to 5.5 V
40°C ≤ Topr ≤ 85°C
38.0
40
42.0
MHz
High-speed on-chip oscillator frequency when
the FRA4 register correction value is written into
the FRA1 register and the FRA5 register
correction value into the FRA3 register (2)
VCC = 1.8 V to 5.5 V
20°C ≤ Topr ≤ 85°C
35.389
36.864
38.338
MHz
VCC = 1.8 V to 5.5 V
40°C ≤ Topr ≤ 85°C
35.020
36.864
38.707
MHz
High-speed on-chip oscillator frequency when
the FRA6 register correction value is written into
the FRA1 register and the FRA7 register
correction value into the FRA3 register
VCC = 1.8 V to 5.5 V
20°C ≤ Topr ≤ 85°C
30.72
32
33.28
MHz
VCC = 1.8 V to 5.5 V
40°C ≤ Topr ≤ 85°C
30.40
32
33.60
MHz
–
Oscillation stability time
VCC = 5.0 V, Topr = 25
°C–
0.5
3
ms
–
Self power consumption at oscillation
VCC = 5.0 V, Topr = 25
°C
–
400
–
A
Table 5.11
Low-speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ.
Max.
fOCO-S
Low-speed on-chip oscillator frequency
60
125
250
kHz
–
Oscillation stability time
VCC = 5.0 V, Topr = 25
°C
–
30
100
s
–
Self power consumption at oscillation
VCC = 5.0 V, Topr = 25
°C–
2
–
A
Table 5.12
Power Supply Circuit Timing Characteristics
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ.
Max.
td(P-R)
Time for internal power supply stabilization during
power-on (2)
–
2000
s
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相关代理商/技术参数
参数描述
R5F21334DDFP#30 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 16KB FLASH 32LQFP
R5F21334DDFP#50 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 16KB FLASH 32LQFP
R5F21334DDFP#V2 功能描述:MCU 16KB ROM 1KB RAM 32-LQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/3x/33D 标准包装:250 系列:80C 核心处理器:8051 芯体尺寸:8-位 速度:16MHz 连通性:EBI/EMI，I²C，UART/USART 外围设备:POR，PWM，WDT 输入/输出数:40 程序存储器容量:- 程序存储器类型:ROMless EEPROM 大小:- RAM 容量:256 x 8 电压 - 电源 (Vcc/Vdd):4.5 V ~ 5.5 V 数据转换器:A/D 8x10b 振荡器型:内部 工作温度:-40°C ~ 85°C 封装/外壳:68-LCC（J 形引线） 包装:带卷 (TR)
R5F21334DDFP#X6 功能描述:MCU 16KB ROM 1KB RAM 32-LQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/3x/33D 标准包装:300 系列:78K0R/Ix3 核心处理器:78K/0R 芯体尺寸:16-位 速度:40MHz 连通性:3 线 SIO，I²C，LIN，UART/USART 外围设备:DMA，LVD，POR，PWM，WDT 输入/输出数:27 程序存储器容量:16KB（16K x 8） 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:1K x 8 电压 - 电源 (Vcc/Vdd):2.7 V ~ 5.5 V 数据转换器:A/D 8x10b 振荡器型:内部 工作温度:-40°C ~ 85°C 封装/外壳:38-SSOP 包装:托盘
R5F21334DNFP 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:RENESAS MCU
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