参数资料
型号: RB520S30T1
厂商: ON Semiconductor
文件页数: 1/3页
文件大小: 87K
描述: DIODE SCHOTTKY 30V 200MA SOD523
产品变化通告: Product Obsolescence 14/Apr/2010
标准包装: 10
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 200mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 600mV @ 200mA
速度: 小信号 =< 200mA(Io),任意速度
电流 - 在 Vr 时反向漏电: 1µA @ 10V
安装类型: 表面贴装
封装/外壳: SC-79,SOD-523
供应商设备封装: SOD-523
包装: 剪切带 (CT)
工具箱: SMSIGDIODEA-KIT-ND - KIT SMALL SIGNAL DIODE DESIGN
其它名称: RB520S30T1OSCT
?
Semiconductor Components Industries, LLC, 2011
August, 2011 ?
Rev. 10
1
Publication Order Number:
RB520S30T1/D
RB520S30T1G,
RB520S30T5G
Schottky Barrier Diode
These Schottky barrier diodes are designed for high?speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand?held and portable
applications where space is limited.
Features
?
Extremely Fast Switching Speed
?
Extremely Low Forward Voltage 0.6 V (max) @ IF
= 200 mA
?
Low Reverse Current
?
ESD Rating: Class 3B per Human Body Model
Class C per Machine Model
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Vdc
Forward Current DC
IF
200
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board,
(Note 1) TA
= 25
°C
Derate above 25°C
PD
200
1.57
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
635
°C/W
Junction and Storage Temperature Range
TJ, Tstg
?55 to +150
°C
1. FR?5 Minimum Pad.
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(VR
= 10 V)
IR
?
?
1.0
A
Forward Voltage
(IF
= 200 mA)
VF
?
?
0.60
Vdc
30 VOLT SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
http://onsemi.com
SOD?523
CASE 502
MARKING DIAGRAM
1
2
12
5J = Device Code
M = Date Code*
= Pb?Free Package
*Date Code orientation position may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
5J M
Device Package Shipping?
ORDERING INFORMATION
RB520S30T1G SOD?523
(Pb?Free)
4 mm Pitch
3000/Tape & Reel
RB520S30T5G SOD?523
(Pb?Free)
2 mm Pitch
8000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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参数描述
RB520S30T1/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:RB520S30T1 SOD523 Package
RB520S30T1G 功能描述:肖特基二极管与整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
RB520S30T1G 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER 200MA
RB520S30T5G 功能描述:肖特基二极管与整流器 SWITCHING DIODE SOD523 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
RB520S30TD 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diode