参数资料
型号: RB521S-40TE61
厂商: Rohm Semiconductor
文件页数: 2/4页
文件大小: 398K
描述: DIODE SCHOTTKY 45V 200MA 2EMD TR
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 40V
电流 - 平均整流 (Io): 200mA
电压 - 在 If 时为正向 (Vf)(最大): 540mV @ 200mA
速度: 小信号 =< 200mA(Io),任意速度
电流 - 在 Vr 时反向漏电: 90µA @ 40V
安装类型: 表面贴装
封装/外壳: SC-79,SOD-523
供应商设备封装: EMD2
包装: 标准包装
其它名称: RB521S-40TE61DKR
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB521S-40
 
?Electrical characteristic curves
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=20mA
300us
time
Mounted on epoxy board
0
5
10
1
10
100
t
Ifsm
0
5
10
1
10
100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
15
20
AVE:5.60A
0
10
20
30
40
50
60
70
80
90
100
Ta=25℃
VR=40V
n=30pcs
AVE:6.86uA
0.01
0.1
1
10
100
1000
10000
100000
10 102030
0102030
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=150℃
FORWARD VOLTAGE : VF(mV)
VF-IF
CHARACTERISTICS
FORWARD CURRENT : IF(mA)
REVERSE CURRENT : I
R
(uA)
REVERSE VOLTAGE : VR(V)
VR-IR
CHARACTERISTICS
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF
DISPERSION MAP
FORWARD VOLTAGE : V
F
(mV)
REVERSE CURRENT : V
R
(uA)
IR
DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM
DISPERSION MAP
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
TIME : t(ms)
IFSM-t CHARACTERISTICS
TIME : (s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE : Rth (
/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf
CHARACTERISTICS
REVERSE POWER
DISSIPATIONP
R
(w)
REVERSE VOLTAGE : VR(V)
VR-PR
CHARACTERISTICS
1
10
100
1000
0 100 200 300 400 500 600
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=150℃
470
480
490
500
510
520
Ta=25℃
IF=200mA
n=30pcs
AVE:495.2mV
20
21
22
23
24
25
26
27
28
29
30
AVE:27.2pF
0
0.05
0.1
0.15
0.2
0.25
0.3
0 0.1 0.2 0.3 0.4
0
1
2
3
4
5
0 10203040
Sin(θ=180)
DC
D=1/2
10
100
Ta=25℃
f=1MHz
VR=0V
n=10pcs
f=1MHz
8.3ms
Ifsm
1cyc
DC
D=1/2
Sin(θ=180)
2/3
2011.03 - Rev.B
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