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| 型号： | RB521S30T5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 113K |
| 描述： | DIODE SCHOTTKY 200MA 30V SOD523 |
| 标准包装： | 8,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 500mV @ 200mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 电流 - 在 Vr 时反向漏电： | 30µA @ 10V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-79，SOD-523 |
| 供应商设备封装： | SOD-523 |
| 包装： | 带卷 (TR) |
              ? Semiconductor Components Industries, LLC, 2011 November, 2011 ? Rev. 8 1 Publication Order Number: RB521S30T1/D RB521S30T1G, NSVRB521S30T1G, RB521S30T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high?speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand?held and portable applications where space is limited. Features ? Extremely Fast Switching Speed ? Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA ? Low Reverse Current ? AEC Qualified and PPAP Capable ? NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current DC IF 200 mA Peak Forward Surge Current (Note 1) IFSM 1.0 A ESD Rating: Class 1C per Human Body Model ESD Rating: Class C per Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 60 Hz for 1 cycle. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR?5 Board, (Note 2) TA = 25 ?C Derate above 25?C PD 200 1.57 mW mW/?C Thermal Resistance, Junction?to?Ambient RJA 635 ?C/W Junction and Storage Temperature Range TJ, Tstg ?55 to +125 ?C 2. FR?5 Minimum Pad. *For additional information on our Pb?Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 30 V SCHOTTKY BARRIER DIODE Device Package Shipping? ORDERING INFORMATION RB521S30T1G SOD?523 (Pb?Free) 3,000/Tape & Reel 4 mm Pitch 1 CATHODE 2 ANODE RB521S30T5G SOD?523 (Pb?Free) 8,000/Tape & Reel 2 mm Pitch http://onsemi.com ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SOD?523 CASE 502 MARKING DIAGRAM 5M M 12 5M = Device Code M = Date Code* = Pb?Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. NSVRB521S30T1G SOD?523 (Pb?Free) 3,000/Tape & Reel3,000/Tape & Reel 4 mm Pitch4 mm Pitch |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RB521S30TE61 | 制造商:ROHM Semiconductor 功能描述: |
| RB521S-30TE61 | 功能描述:肖特基二极管与整流器 SCHOTTKY 30V 200MA RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| RB521S-30-TP | 功能描述:肖特基二极管与整流器 30V 1A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| RB521S-40 | 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE |
| RB521S-40_11 | 制造商:ROHM 制造商全称:Rohm 功能描述:Schottky barrier diode |
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