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参数资料
| 型号： | RBO08-40T |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 浪涌电流限制器 |
| 英文描述： | SILICON SURGE PROTECTOR, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 301K |
| 代理商： | RBO08-40T |
RBO08-40G / RBO08-40T
3/9
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
VF13
IF =8A
RBO08-40G
1.5
V
RBO08-40T
1.7
V
IF =8A@Tamb = 25°C
1.45
V
VF13
IF =4A
RBO08-40G
1.3
V
RBO08-40T
1.35
V
IF =4A@Tamb = 25°C
1.2
V
VF13
IF =1A
1.1
V
IF =1A@Tamb = 25°C
1.0
V
IF =1A@Tj= 85°C
0.9
V
ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40°C < Tamb < + 85°C)
Symbol
Parameter
VRM31/VRM32
Stand-off voltage Transil T1 / Transil T2.
VBR31/VBR32
Breakdown voltage Transil T1 / Transil T2.
IR31/IR32
Leakage current Transil T1 / Transil T2.
VCL31/VCL32
Clamping voltage Transil T1 / Transil T2.
VF13
Forward voltage drop Diode D1.
IPP
Peak pulse current.
αT
Temperature coefficient of VBR.
C31/C32
Capacitance Transil T1 / Transil T2.
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
VBR 31
IR =1mA
22
35
V
VBR 31
IR = 1 mA, Tamb = 25°C
24
32
V
IRM 31
VRM =20V
50
A
IRM 31
VRM =20V,Tamb = 25°C
10
A
VCL 31
IPP = 15A, Tj initial = 25°C
10/1000s
40
V
α T
Temperature coefficient of VBR
910
-4/°C
C 31
F = 1MHz
VR =0 V
1000
pF
ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40°C < Tamb < + 85°C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
VBR 32
IR =1mA
22
35
V
VBR 32
IR = 1 mA, Tamb = 25°C
24
32
V
IRM 32
VRM =20V
50
A
IRM 32
VRM =20V,Tamb = 25°C
10
A
VCL 32
IPP = 37.5 A
10/1000s
40
V
α T
Temperature coefficient of VBR
8.5
10
-4/
C
ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40°C < Tamb < + 85°C)
相关PDF资料 |
PDF描述 |
|---|---|
| RBO08-40G | SILICON SURGE PROTECTOR |
| RBO40-40T | SILICON SURGE PROTECTOR, TO-220AB |
| RC003A3 | 1-OUTPUT 3 W DC-DC REG PWR SUPPLY MODULE |
| RC003B3 | 1-OUTPUT 3 W DC-DC REG PWR SUPPLY MODULE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RBO40 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:REVERSED BATTERY AND OVERVOLTAGE PROTECTION |
| RBO40-40G | 功能描述:TVS二极管阵列 Batt & Overvolt Prot RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| RBO40-40G | 制造商:STMicroelectronics 功能描述:TVS DIODE |
| RBO40-40G-TR | 功能描述:浪涌抑制器 Reversed Battery OverVolt Prot RoHS:否 制造商:Bourns 电压额定值:40 V 电流额定值:750 mA 工作温度范围:- 40 C to + 125 C 端接类型:SMD/SMT 封装 / 箱体: |
| RBO40-40M | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO |
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