参数资料
型号: RBO08-40T
厂商: STMICROELECTRONICS
元件分类: 浪涌电流限制器
英文描述: SILICON SURGE PROTECTOR, TO-220AB
封装: PLASTIC PACKAGE-3
文件页数: 6/9页
文件大小: 301K
代理商: RBO08-40T
6/9
RBO08-40G / RBO08-40T
12
5
10
20
50
100
0.1
0.2
0.5
1.0
2.0
5.0
10.0
tp(ms)
Pp (kW)
Transil T2
Diode D1
p
Fig. 1 : Peak pulse power versus exponential
pulse duration (Tj initial = 85°C).
VCL(V)
0.1
0.2
0.5
1.0
2.0
5.0 10.0 20.0
50.0 100.0
25
30
35
40
45
50
tp = 20 s
tp = 1ms
Ipp(A)
Fig. 2-2 : Clamping voltage versus peak pulse
current (Tj initial = 85°C).
Exponential waveform tp = 1 ms and tp = 20
s
(TRANSIL T1).
0.1
0.2
0.5
1.0
5.0
10.0 20.0
50.0
25
30
35
40
45
VCL(V)
tp = 40ms
tp = 1ms
2.0
Ipp(A)
Fig. 2-1 : Clamping voltage versus peak pulse
current (Tj initial = 85°C).
Exponential waveform tp = 40 ms and tp=1ms
(TRANSIL T2).
0
25
50
75
100
125
150
175
0.00
0.20
0.40
0.60
0.80
1.00
1.20
Tj initial (°C)
Ppp[Tj]/Ppp[Tj initial=85°C]
Fig. 3 : Relative variation of peak pulse power
versus junction temperature.
相关PDF资料
PDF描述
RBO08-40G SILICON SURGE PROTECTOR
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