参数资料
型号: RC28F160C3TC90
厂商: INTEL CORP
元件分类: PROM
英文描述: 1M X 16 FLASH 3V PROM, 90 ns, PBGA64
封装: BGA-64
文件页数: 14/72页
文件大小: 1083K
代理商: RC28F160C3TC90
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Order Number: 290645, Revision: 023
21
VPP2
1, 3
11.4
12.6
Volts
Cycling
Block Erase Cycling
3
100,000
Cycles
Notes:
1.VCC and VCCQ must share the same supply when they are in the VCC1 range.
2.VCCMax = 3.3 V for 0.25m 32-Mbit devices.
3.Applying VPP = 11.4 V–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on
the main blocks and 2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of
80 hours maximum.
Table 5.
Temperature and Voltage Operating Conditions
Symbol
Parameter
Notes
Min
Max
Units
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