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参数资料
型号： RC28F160C3BD70
厂商： INTEL CORP
元件分类： PROM
英文描述： 1M X 16 FLASH 3V PROM, 70 ns, PBGA64
封装： BGA-64
文件页数： 1/72页
文件大小： 1083K
代理商： RC28F160C3BD70
Order Number: 290645, Revision: 023
May 2005
Intel Advanced+ Boot Block Flash
Memory (C3)
28F800C3, 28F160C3, 28F320C3 (x16)
Datasheet
Product Features
The Intel Advanced+ Book Block Flash Memory (C3) device, manufactured on Intel’s latest
0.13
m and 0.18 m technologies, represents a feature-rich solution for low-power
applications. The C3 device incorporates low-voltage capability (3 V read, program, and erase)
with high-speed, low-power operation. Flexible block locking allows any block to be
independently locked or unlocked. Add to this the Intel
Flash Data Integrator (Intel FDI)
software and you have a cost-effective, flexible, monolithic code plus data storage solution.
Intel Advanced+ Boot Block Flash Memory (C3) products are available in 48-lead TSOP, 48-
ball CSP, and 64-ball Easy BGA packages. Additional information on this product family can be
obtained from the Intel
Flash website: http://www.intel.com/design/flash.
■
Flexible SmartVoltage Technology
— 2.7 V– 3.6 V read/program/erase
— 12 V for fast production programming
■
1.65 V to 2.5 V or 2.7 V to 3.6 V I/O
Option
— Reduces overall system power
■
High Performance
— 2.7 V– 3.6 V: 70 ns max access time
■
Optimized Architecture for Code Plus
Data Storage
— Eight 4 Kword blocks, top or bottom
parameter boot
— Up to 127 x 32 Kword blocks
— Fast program suspend capability
— Fast erase suspend capability
■
Flexible Block Locking
— Lock/unlock any block
— Full protection on power-up
— Write Protect (WP#) pin for hardware
block protection
■
Low Power Consumption
— 9 mA typical read
— 7 uA typical standby with Automatic
Power Savings feature
■
Extended Temperature Operation
— -40 °C to +85 °C
■
128-bit Protection Register
— 64 bit unique device identifier
— 64 bit user programmable OTP cells
■
Extended Cycling Capability
— Minimum 100,000 block erase cycles
■
Software
— Supported by Intel’s Advanced Flash
File Managers -- Intel
VFM, Intel
FDI, etc.
— Code and data storage in the same
memory device
— Robust Power Loss Recovery for Data
Loss Prevention
— Common Flash Interface
— http://www.intel.com/go/flashsw
■
Standard Surface Mount Packaging
— 48-Ball
BGA*/VFBGA
— 64-Ball Easy BGA packages
— 48-TSOP package
■
ETOX VIII (0.13
m) Flash
Technology
— 8, 16, 32 Mbit
■
ETOX VII (0.18
m) Flash Technology
— 16, 32 Mbit
■
ETOX VI (0.25
m) Flash Technology
— 8, 16 and 32 Mbit
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相关代理商/技术参数
参数描述
RC28F160C3BD70A 功能描述:IC FLASH 16MBIT 70NS 64BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘
RC28F160C3TA110 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
RC28F160C3TA70 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
RC28F160C3TA90 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
RC28F160C3TA90SB93 功能描述:IC FLASH 16MBIT 90NS 64BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF)
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