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参数资料
| 型号： | RC28F160C3BD70 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PBGA64 |
| 封装： | BGA-64 |
| 文件页数： | 13/72页 |
| 文件大小： | 1083K |
| 代理商： | RC28F160C3BD70 |
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Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
20
Order Number: 290645, Revision: 023
5.0
Maximum Ratings and Operating Conditions
5.1
Absolute Maximum Ratings
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These ratings are stress ratings only. Operation beyond the “Operating Conditions” is not
recommended, and extended exposure beyond the “Operating Conditions” may affect device
reliability.
.
5.2
Operating Conditions
NOTICE:
Specifications are subject to change without notice. Verify with your local Intel Sales office that you have the latest
datasheet before finalizing a design
.
Parameter
Maximum Rating
Notes
Extended Operating Temperature
During Read
–40 °C to +85 °C
During Block Erase and Program
–40 °C to +85 °C
Temperature under Bias
–40 °C to +85 °C
Storage Temperature
–65 °C to +125 °C
Voltage On Any Pin (except VCC and VPP) with Respect to GND
–0.5 V to +3.7 V
1
VPP Voltage (for Block Erase and Program) with Respect to GND
–0.5 V to +13.5 V
1,2,3
VCC and VCCQ Supply Voltage with Respect to GND
–0.2 V to +3.6 V
Output Short Circuit Current
100 mA
4
Notes:
1.Minimum DC voltage is –0.5 V on input/output pins. During transitions, this level may
undershoot to –2.0 V for periods <20 ns. Maximum DC voltage on input/output pins is VCC
+0.5 V which, during transitions, may overshoot to VCC +2.0 V for periods <20 ns.
2.Maximum DC voltage on VPP may overshoot to +14.0 V for periods <20 ns.
3.VPP Program voltage is normally 1.65 V–3.6 V. Connection to a 11.4 V–12.6 V supply can be
done for a maximum of 1000 cycles on the main blocks and 2500 cycles on the parameter
blocks during program/erase. VPP may be connected to 12 V for a total of 80 hours maximum.
4.Output shorted for no more than one second. No more than one output shorted at a time.
Table 5.
Temperature and Voltage Operating Conditions
Symbol
Parameter
Notes
Min
Max
Units
TA
Operating Temperature
–40
+85
°C
VCC1
VCC Supply Voltage
1, 2
2.7
3.6
Volts
VCC2
1, 2
3.0
3.6
VCCQ1
I/O Supply Voltage
12.7
3.6
Volts
VCCQ2
1.65
2.5
VCCQ3
1.8
2.5
VPP1
Supply Voltage
1
1.65
3.6
Volts
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相关代理商/技术参数 |
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| RC28F160C3BD70A | 功能描述:IC FLASH 16MBIT 70NS 64BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| RC28F160C3TA110 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TA70 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TA90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TA90SB93 | 功能描述:IC FLASH 16MBIT 90NS 64BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
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