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参数资料
| 型号： | RC28F160C3BD70 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PBGA64 |
| 封装： | BGA-64 |
| 文件页数： | 11/72页 |
| 文件大小： | 1083K |
| 代理商： | RC28F160C3BD70 |
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Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Order Number: 290645, Revision: 023
19
RP#
Input
RESET/DEEP POWER-DOWN:
Active-low input.
When RP# is at logic low, the device is in reset/deep power-down mode, which drives the outputs to
High-Z, resets the Write State Machine, and minimizes current levels (ICCD).
When RP# is at logic high, the device is in standard operation. When RP# transitions from logic-low to
logic-high, the device resets all blocks to locked and defaults to the read array mode.
WE#
Input
WRITE ENABLE:
Active-low input. WE# controls writes to the device. Address and data are latched on
the rising edge of the WE# pulse.
WP#
Input
WRITE PROTECT:
Active-low input.
When WP# is a logic low, the lock-down mechanism is enabled and blocks marked lock-down cannot
be unlocked through software.
When WP# is logic high, the lock-down mechanism is disabled and blocks previously locked-down are
now locked and can be unlocked and locked through software. After WP# goes low, any blocks
previously marked lock-down revert to the lock-down state.
See Section 11.0, “Security Modes” on page 49 for details on block locking.
VPP
Input/
Power
PROGRAM/ERASE Power Supply:
Operates as an input at logic levels to control complete device
protection. Supplies power for accelerated Program and Erase operations in 12 V
± 5% range. Do not
leave this pin floating.
Lower VPP
≤ VPPLK to protect all contents against Program and Erase commands.
Set VPP = VCC for in-system Read, Program and Erase operations. In this configuration, VPP can
drop as low as 1.65 V to allow for resistor or diode drop from the system supply.
Apply VPP to 12 V
± 5% for faster program and erase in a production environment. Applying 12 V ± 5%
to VPP can only be done for a maximum of 1000 cycles on the main blocks and 2500 cycles on the
boot blocks. VPP can be connected to 12 V for a total of 80 hours maximum. See Section 11.6 for
details on VPP voltage configurations.
VCC
Power
DEVICE CORE Power Supply:
Supplies power for device operations.
VCCQ
Power
OUTPUT Power Supply:
Output-driven source voltage. This ball can be tied directly to VCC if
operating within VCC range.
GND
Power
Ground:
For all internal circuitry. All ground inputs must be connected.
DU
—
Do Not Use:
Do not use this ball. This ball must not be connected to any power supplies, signals or
other balls,; it must be left floating.
NC
—
No Connect
Table 4.
Signal Descriptions
Symbol
Type
Description
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| RM4194D/883B | DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, CDIP14 |
| RM4194D | DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, CDIP14 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| RC28F160C3BD70A | 功能描述:IC FLASH 16MBIT 70NS 64BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| RC28F160C3TA110 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TA70 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TA90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TA90SB93 | 功能描述:IC FLASH 16MBIT 90NS 64BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
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