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参数资料
| 型号： | RC28F160C3BD70 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PBGA64 |
| 封装： | BGA-64 |
| 文件页数： | 45/72页 |
| 文件大小： | 1083K |
| 代理商： | RC28F160C3BD70 |
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Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Order Number: 290645, Revision: 023
5
Revision History
Date of
Revision
Version
Description
05/12/98
-001
Original version
07/21/98
-002
48-Lead TSOP package diagram change
BGA package diagrams change
32-Mbit ordering information change (Section 6)
CFI Query Structure Output Table Change (Table C2)
CFI Primary-Vendor Specific Extended Query Table Change for Optional Features and
Command Support change (Table C8)
Protection Register Address Change
IPPD test conditions clarification (Section 4.3)
BGA package top side mark information clarification (Section 6)
10/03/98
-003
Byte-Wide Protection Register Address change
VIH Specification change (Section 4.3)
VIL Maximum Specification change (Section 4.3)
ICCS test conditions clarification (Section 4.3)
Added Command Sequence Error Note (Table 7)
Datasheet renamed from 3 Volt Advanced Boot Block, 8-, 16-, 32-Mbit Flash Memory
Family.
12/04/98
-004
Added tBHWH/tBHEH and tQVBL (Section 4.6)
Programming the Protection Register clarification (Section 3.4.2)
12/31/98
-005
Removed all references to x8 configurations
02/24/99
-006
Removed reference to 40-Lead TSOP from front page
06/10/99
-007
Added Easy BGA package (Section 1.2)
Removed 1.8 V I/O references
Locking Operations Flowchart changed (Appendix B)
Added tWHGL (Section 4.6)
CFI Primary Vendor-Specific Extended Query changed (Appendix C)
03/20/00
-008
Max ICCD changed to 25 A
Table 10, added note indicating VCCMax = 3.3 V for 32-Mbit device
04/24/00
-009
Added specifications for 0.18 micron product offerings throughout document Added 64-
Mbit density
10/12/00
-010
Changed references of 32Mbit 80ns devices to 70ns devices to reflect the faster product
offering.
Changed VccMax=3.3V reference to indicate that the affected product is the 0.25
m
32Mbit device.
Minor text edits throughout document.
7/20/01
-011
Added 1.8v I/O operation documentation where applicable
Added TSOP PCN ‘Pin-1’ indicator information
Changed references in 8 x 8 BGA pinout diagrams from ‘GND’ to ‘Vssq’
Added ‘Vssq’ to Pin Descriptions Information
Removed 0.4 m references in DC characteristics table
Corrected 64Mb package Ordering Information from 48-uBGA to 48-VFBGA
Corrected ‘bottom’ parameter block sizes to on 8Mb device to 8 x 4KWords
Minor text edits throughout document
10/02/01
-012
Added specifications for 0.13 micron product offerings throughout document
2/05/02
-013
Corrected Iccw / Ippw / Icces /Ippes values.
Added mechanicals for 16Mb and 64Mb
Minor text edits throughout document.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RC28F160C3BD70A | 功能描述:IC FLASH 16MBIT 70NS 64BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| RC28F160C3TA110 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TA70 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TA90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TA90SB93 | 功能描述:IC FLASH 16MBIT 90NS 64BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
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