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参数资料
| 型号： | RD39ESAB4 |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 37.58 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| 封装： | DO-34, 2 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 81K |
| 代理商： | RD39ESAB4 |
5
RD2.0ES to RD39ES
Data Sheet D13935EJ6V0DS00
Fig. 6
POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Fig. 7
THERMAL RESISTANCE vs.
SIZE OF P.C BOARD
Fig. 8
DYNAMIC IMPEDANCE vs.
ZENER CURRENT
Fig. 9
ZENER VOLTAGE TEMPERATURE
COEFFICIENT vs. ZENER VOLTAGE
Fig. 10
SURGE REVERSE POWER RATINGS
0.08
0.06
0.04
0.02
0
–0.02
–0.04
–0.06
32
0.1
TYP.
40
24
16
8
0
–8
–16
–24
–0.08
–32
–0.1
–40
8
412
16
20
γZ
–
V
Z
Temperature
Coefficience
–
%/
°C
γZ
–
V
Z
Temperature
Coefficience
–
mV/
°C
24
28
32
36
40
mV/
°C
RD2.0ES to RD39ES
%/
°C
VZ – Zener Voltage – V
44
0
500
400
300
200
100
0
2040
6080
100
TA – Ambient Temperature –
°C
P
–
Power
Dissipation
–
mW
120 140 160 180 200
= 5 mm
= 10 mm
7 mm P.C. Board
t = 0.035 mm
= 5 mm
= 10 mm
= 3 mm
φ
= 3 mm
3 mm P.C. Board
t = 0.035 mm
φ
500
400
300
200
100
020
40
S – Size of P.C. Board – mm2
R
th
–
Thermal
Resistance
–
°C/W
60
80
100
= 10 mm
= 5mm
= 3mm
S
Junction to ambient
1000
100
10
TYP.
1
0.01
0.1
IZ – Zener Current – mA
Z
–
Dynamic
Impedance
–
10
1
100
RD3.3ES
RD15ES
RD39ES
RD20ES
RD5.6ES
RD10ES
RD7.5ES
RD5.1ES
RD2.0ES
RD3.9ES
RD4.7ES
1000
TA=25
°C
Non-Repetitive
tT
P
RSM
100
10
1
10
100 m
100
1 m
10 m
tT – Pulse Width – s
P
RSM
–
Surge
Reverse
Power
–
W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RD39ES-AZ/AB2 | 制造商:Renesas Electronics Corporation 功能描述: |
| RD39ES-AZ/AB3 | 制造商:Renesas Electronics Corporation 功能描述: |
| RD39ES-AZ-AB1 | 制造商:Renesas Electronics 功能描述:Bulk |
| RD39ES-AZ-AB4 | 制造商:Renesas Electronics Corporation 功能描述: |
| RD39F | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:ZENER DIODES |
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