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参数资料
| 型号： | RDHA710SE10A2QK |
| 元件分类： | 继电器，输入/输出模块 |
| 英文描述： | TRANSISTOR OUTPUT SOLID STATE RELAY, 1000 V ISOLATION-MAX |
| 封装： | HERMETICALLY SEALED, SURFACE MOUNT PACKAGE-8 |
| 文件页数： | 2/6页 |
| 文件大小： | 116K |
| 代理商： | RDHA710SE10A2QK |
2
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RDHA710SE10A2QK
For notes, please refer to page 3
Pre-Irradiation
Electrical Characteristics per Channel @ -55°C
dTCd+125°C (Unless Otherwise Specified)
Parameter
Group A
Test Conditions
Symbol Min. Typ. Max. Units
Subgroups
1
VIN = 5.0V
--
0.070 0.100
2
VDD = 5.0V, IO= 10A
--
0.115 0.145
1
VIN = 0.8V, VS = 100V
--
25
2
VIN = 0.8V, VS = 80V
--
250
1
--
1.0
2,3
--
3.0
VIN =5.0V, VDD =5.0V, VS =30V
RC = 7.0
/100F, PW = 50ms
VIN =0.8V, VDD =5.0V, VS =30V
RC = 7.0
/100F, PW = 50ms
VIN =5.0V, VDD =5.0V, VS =30V
RC = 7.0
/100F, PW = 50ms
VIN =0.8V, VDD =5.0V, VS =30V
RC = 7.0
/100F, PW = 50ms
A
toff
--
tr
5.5
ms
--
6.5
26
10
--
6.0
--
1.3
Fall Time
d,h
tf
1,2,3
Turn-On Delay
h
1,2,3
Turn-Off Delay
h
Rise Time
d,h
1,2,3
Output On-Resistance
RDS(ON)
Output Leakage Current
IO
A
Input Buffer Current
VIN = 5.0V
IIN
50
25
ton
1,2,3
General Characteristics per Channel @ -55°C
dTCd+125°C (Unless Otherwise Specified)
Parameter
Group A
Test Conditions
Symbol Min. Typ. Max. Units
Subgroups
Input Buffer Threshold Voltage
ce
VDD = 5.0V, IO= 10A
VIN(TH)
4.5
--
V
VDD = 5.0V, IO= 10A
--
10
15
VDD = 10V, IO= 10A i
--
25
Input-to-Output Leakage Current
1
VI-O = 1.0KVdc, dwell = 5.0s
II-O
--
1.0
A
VIN = 0.8V, f = 1.0MHz, VS =25V
TC = 25°C
Thermal Resistance
c
VIN = 5.0V, VDD = 5.0V c,f
RTHJC
--
1.7
°C/W
MTBF (Per Channel)
MIL-HDBK-217F, SF@Tc= 25°C
6.0
--
MHrs
Input Supply Current
c
IDD
mA
--
pF
Output Capacitance
c
COSS
--
365
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