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参数资料
| 型号： | RF3315PCBA-411 |
| 厂商： | RF Micro Devices, Inc. |
| 英文描述： | ROADBAND HIGH LINEARITY AMPLIFIER |
| 中文描述： | ROADBAND高线性功率放大器 |
| 文件页数： | 2/12页 |
| 文件大小： | 228K |
| 代理商： | RF3315PCBA-411 |
4-558
RF3315
Rev A9 050310
Absolute Maximum Ratings
Parameter
RF Input Power
Device Voltage
Device Current
Operating Temperature
Storage Temperature
Rating
+20
-0.5 to +6.0
250
-40 to +85
-40 to +150
Unit
dBm
V
mA
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall
AC Specifications (2GHz)
V
CC
=5V, RF
IN
=-10dBm, Freq=2.0GHz,
with 2GHz application schematic.
Frequency
Gain (Small Signal)
Input Return Loss
Output Return Loss
Output IP3
Output P1dB
Noise Figure
300
11.0
3000
MHz
dB
dB
dB
dBm
dBm
dB
12.5
15
15
+40.0
+23.0
3.0
F=2GHz
F=2GHz
F=2GHz
F
1
= 1.99GHz, F
2
=2.00GHz, P
IN
=-5dBm
+36
+21
4.0
AC Specifications
(900MHz)
Frequency
Gain (Small Signal)
Input Return Loss
Output Return Loss
Output IP3
Output P1dB
Noise Figure
Thermal
Theta
JC
Maximum Measured Junction
Temperature at DC Bias Con-
ditions
Mean Time To Failure
DC Specifications
Device Voltage
Operating Current Range
Note: The RF3315 must be operated at or below 170mA to ensure the highest possible reliability and electrical performance.
V
CC
=5V, RF
IN
=-10dBm, Freq=900MHz,
with 900MHz application schematic.
300
16
3000
MHz
dB
dB
dB
dBm
dBm
dB
18
20
20
+41
+25
2.5
+36
+23
F
1
= 900MHz, F
2
=901MHz, P
IN
=-10dBm
3.5
I
CC
=150mA, P
DISS
=770mW. (See Note.)
88
154
°C/W
°C
T
CASE
=+85°C
370
years
T
CASE
=+85°C
4.5
100
5.0
150
5.5
170
V
I
CC
=150mA
V
CC
=5V
mA
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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