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参数资料
| 型号： | RFD14N05LSM9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 50V 14A TO-252AA |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 14A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 14A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 670pF @ 25V |
| 功率 - 最大： | 48W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | RFD14N05LSM9ADKR |
RFD14N05L, RFD14N05LSM
Typical Performance Curves
Unless Otherwise Specified (Continued)
50
35
30
V GS = 10V
V GS = 5V
V GS = 4.5V
V GS = 4V
10
STARTING T J = 25 o C
25
20
PULSE DURATION = 80 μ s, T C = 25 o C
DUTY CYCLE = 0.5% MAX.
15
STARTING T J = 150 o C
If R = 0
10
V GS = 3V
1
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS -V DD ) +1]
0.01 0.1 1
10
5
0
0
1.5
3.0 4.5
V GS = 2.5V
6.0 7.5
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
35
250
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
30
-55 o C
25 o C
175 o C
200
I D = 7A
I D = 14A
I D = 28A
25
20
150
15
10
PULSE DURATION = 80 μ s
100
50
I D = 3.5A
5
0
0
1.5
3.0
DUTY CYCLE = 0.5% MAX.
V DD = 15V
4.5 6.0
7.5
0
2.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX.
3.0 3.5 4.0 4.5
5.0
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
160
140
V DD = 25V, I D = 14A, R L = 3.57 ?
t d(OFF)
2.5
2.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX.
V GS = 10V, I D = 14A
120
100
80
60
40
20
t r
t f
t d(ON)
1.5
1.0
0.5
0
0
10
20 30 40
50
0
-80
-40
0 40 80 120 160
200
R GS , GATE TO SOURCE RESISTANCE ( ? )
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
?2004 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
RFD14N05L, RFD14N05LSM Rev. C0
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| RFD14N05SL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD14N05SM | 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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