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| 型号： | RFD14N05LSM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 50V 14A TO-252AA |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 14A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 14A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 670pF @ 25V |
| 功率 - 最大： | 48W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 管件 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
RFD14N05L, RFD14N05LSM
Data Sheet
N-Channel Logic Level Power MOSFET
50 V, 14 A, 100 m?
These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. This performance is accomplished
through a special gate oxide design which provides full rated
conductance at gate bias in the 3V-5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA09870.
Ordering Information
October 20 13
Features
? 14A, 50V
? r DS(ON) = 0.100 ?
? Temperature Compensating PSPICE ? Model
? Can be Driven Directly from CMOS, NMOS, and
TTL Circuits
? Peak Current vs Pulse Width Curve
? UIS Rating Curve
? 175 o C Operating Temperature
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
PART NUMBER
RFD14N05L
RFD14N05LSM
PACKAGE
TO-251AA
TO-252AA
BRAND
14N05L
14N05L
D
RFD14N05LSM9A
TO-252AA
14N05L
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05LSM9A.
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
?2004 Fairchild Semiconductor Corporation
GATE
SOURCE
S
JEDEC TO-252AA
DRAIN (FLANGE)
RFD14N05L, RFD14N05LSM Rev. C0
相关PDF资料 |
PDF描述 |
|---|---|
| RFD14N05L | MOSFET N-CH 50V 14A I-PAK |
| CUB3T310 | MODULE LCD TIMER .1 HR W/ RESET |
| E-9C | SCOTCHLOK CARTRIDGE PACK CRIMP |
| CUB7TVG0 | TIMER LCD PROGRAM 8-DIGIT HV GRN |
| 210-12ESD | SWITCH EXTENDED ACTUATOR 12 SEC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| RFD14N05LSM | 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC D-PAK |
| RFD14N05LSM | 制造商:Fairchild Semiconductor Corporation 功能描述:PWR MOS 50V/14A/0.100 OHM N-CH LOGIC-LVL |
| RFD14N05LSM_Q | 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| RFD14N05LSM9A | 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| RFD14N05LSM9A_S2515 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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