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参数资料
| 型号： | RJN1164 |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel Junction FET |
| 中文描述： | N沟道结场效应管 |
| 文件页数： | 2/4页 |
| 文件大小： | 175K |
| 代理商： | RJN1164 |
RJN1164
RFsemi Technologies, Inc.
Rev. 6
Electrical Characteristics
Parameter
[Ta = 25
o
C
, V
CC
= 4.5V, R
L
= 1k
, C
IN
= 15pF, See Specified Test Circuit.]
Voltage Gain
Reduced Voltage Characteristics
Frequency Characteristics
Input Impedance
Output Impedance
Total Harmonic Distortion
Output Noise Voltage
Test Circuit
Voltage Gain
Frequency Characteristics
Distortion
Reduced Voltage Characteristics
1k
15
pF
33
μ
F
Symbol
Conditions
Min
Typ
Max
Unit
G
V
G
VV
G
Vf
Z
IN
Z
O
THD
V
NO
V
IN
= 10 mV, f = 1kHz
V
IN
= 10 mV, V
CC
= 4.5
->
1.5V
f = 1kHz to 110Hz
f = 1kHz
f = 1kHz
V
IN
= 10mV, f = 1kHz
V
IN
= 0, A curve
-3.0
-1.2
dB
dB
dB
M
%
dB
-3.5
-1.0
30
700
1.0
-110
I
D
- V
DS
Drain - to - Source Voltage, V
DS
- V
0
1
2
3
4
5
D
D
μ
A
0
100
200
300
400
500
-0.1V
-0.2V
-0.3V
-0.4V
-0.5V
V
GS
= 0V
I
D
- V
DS
Drain - to - Source Voltage, V
DS
- V
0
2
4
6
8
10
D
D
μ
A
0
100
200
300
400
500
-0.1V
-0.2V
-0.3V
-0.4V
-0.5V
V
GS
= 0V
B
O
V
THD
Vcc = 4.5V
1k
Output Impedance
A
VTVM
Vcc = 1.5V
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