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参数资料
| 型号： | RLT1020-500G |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | High Power Infrared Laserdiode |
| 中文描述： | 高功率红外线Laserdiode |
| 文件页数： | 1/2页 |
| 文件大小： | 49K |
| 代理商： | RLT1020-500G |
R OIT H NE R L A S E R T E C H NIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
e-mail: office@roithner-laser.com http://www.roithner-laser.com
RLT1020-500G
TECHNICAL DATA
High Power Infrared Laserdiode
Structure:
InGaAs quantum well
Lasing wavelength:
1020 nm typ., multimode
Max. optical power:
600 mW, 1 x 100 μm2 aperture
Package:
9 mm
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Maximum Ratings (Tc=25°C)
CHARACTERISTIC
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
SYMBOL
P
o
V
R(LD)
V
R(PD)
T
C
T
STG
RATING
600
2
30
-40 .. +50
-70 .. +85
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
Threshold Current
Operation Current
Operation Voltage
Lasing Wavelength
Spectral Width
FWHM
Beam Divergence
Beam Divergence
Differential Efficiency
Monitor Current
TEST CONDITION
MIN
TYP
500
300
790
1.5
1020 1040
10
10
30
0.7
350
MAX
UNIT
mW
mA
mA
V
nm
nm
°
°
mW/mA
μA
P
o
I
th
I
op
U
op
λ
p
λ
θ
//
θ
⊥
350
820
1.6
P
o
= 500 mW
P
o
= 500 mW
P
o
= 500 mW
P
o
= 500 mW
P
o
= 500 mW
P
o
= 500 mW
P
o
= 500 mW
P
o
= 500 mW
990
7
15
0.4
150
13
35
1.0
600
dP
o
/dI
op
I
m
NOT E !
LASERDIODE
MUST BE
COOLED!
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RLT1050M-500G | 制造商:ROITHNER 制造商全称:ROITHNER 功能描述:High Power Infrared Laser Diode |
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| RLT1060-10G | 制造商:ROITHNER 制造商全称:ROITHNER 功能描述:Infrared Laser Diode |
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