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参数资料
| 型号： | RM30TC-24 |
| 元件分类： | 桥式整流 |
| 英文描述： | 3 PHASE, 60 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE |
| 文件页数： | 2/3页 |
| 文件大小： | 51K |
| 代理商： | RM30TC-24 |
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
MITSUBISHI DIODE MODULES
RM30TC-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
24
1200
1350
370
Symbol
VRRM
VRSM
Ea
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Recommended AC input voltage
Unit
A
A2s
Hz
°C
V
Nm
kgcm
Nm
kgcm
g
Conditions
Three-phase full wave rectifying circuit, TC=103
°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
Main terminal screw M5
Mounting screw M5
Typical value
Ratings
60
600
1.5
× 103
1000
–40~+150
–40~+125
2500
1.47~1.96
15~20
1.47~1.96
15~20
220
Symbol
IO
IFSM
I2t
f
Tj
Tstg
Viso
—
Parameter
DC output current
Surge (non-repetitive) forward current
I2t for fusing
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
2H
1600
1700
440
Unit
mA
V
°C/W
M
Limits
Symbol
IRRM
VFM
Rth (j-c)
Rth (c-f)
—
Parameter
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
Tj=150
°C, VRRM applied
Tj=25
°C, IFM=60A, instantaneous meas.
Junction to case
Case to fin, conductive grease applid
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
10
Typ.
—
Max.
10
1.3
0.3
0.06
—
ELECTRICAL CHARACTERISTICS
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