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参数资料
| 型号： | RM30TC-24 |
| 元件分类： | 桥式整流 |
| 英文描述： | 3 PHASE, 60 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE |
| 文件页数： | 3/3页 |
| 文件大小： | 51K |
| 代理商： | RM30TC-24 |
Feb.1999
MITSUBISHI DIODE MODULES
RM30TC-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
ALLOWABLE SURGE (NON-REPETITIVE)
FORWARD CURRENT
FOR
W
ARD
CURRENT
(A)
CONDUCTION TIME
(CYCLES AT 60Hz)
FORWARD VOLTAGE (V)
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
MAXIMUM POWER DISSIPATION
TIME (s)
DC OUTPUT CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. DC OUTPUT CURRENT
CASE
TEMPERA
TURE
(°
C)
DC OUTPUT CURRENT (A)
TRANSIENT
THERMAL
IMPEDANCE
(°
C/
W)
SURGE
(NON-REPETITIVE)
FOR
W
ARD
CURRENT
(A)
POWER
DISSIP
A
TION
(W)
–3
10
–2
10
–1
10
0
10
0
10
1
10
3
10
2
10
1
10
0
10
160
0
080
20
30
50
60
20
40
60
80
100
120
140
10
40
70
0.6
7
5
3
2
7
5
3
2
7
5
3
2
0.8
1.2
2.0
2.4
1.6
Tj=25°C
70
50
30
20
7
5
3
2
0
100
800
10
1
100
200
300
400
500
600
700
7
5
3
2
7
5
3
2
7
5
3
2
0.40
0
0.05
7
5
3
2
0.10
0.15
0.20
0.25
0.30
0.35
160
80
030
80
20
50
90
60
100
110
120
130
140
150
10
40
70
RESISTIVE, INDUCTIVE LOAD
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RM30TC-2H | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE |
| RM30TC-40 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
| RM30TPM-H | 功能描述:DIODE 3-PHASE BRIDGE 800V 60A RoHS:是 类别:半导体模块 >> 桥式整流器 系列:- 标准包装:10 系列:- 电压 - 峰值反向(最大):1000V 电流 - DC 正向(If):35A 二极管类型:单相 速度:标准恢复 >500ns，> 200mA（Io） 反向恢复时间(trr):- 安装类型:底座安装 封装/外壳:ISOTOP 包装:托盘 供应商设备封装:ISOTOP? |
| RM30TPM-H_02 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE |
| RM30TPM-M | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE |
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