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参数资料
| 型号： | RN1310 |
| 厂商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 东芝npn型晶体管硅外延型（厘进程） |
| 文件页数： | 5/5页 |
| 文件大小： | 162K |
| 代理商： | RN1310 |
RN1310,RN1311
2001-06-07
5
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
相关PDF资料 |
PDF描述 |
|---|---|
| RN1311 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1314 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1315 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1316 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1317 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| RN1310(TE85L,F) | 功能描述:开关晶体管 - 偏压电阻器 100mA 50volts 3Pin 4.7Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| RN1310_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| RN1311 | 功能描述:开关晶体管 - 偏压电阻器 INCORRECT MOUSER P/N 10Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| RN1311(TE85L,F) | 功能描述:开关晶体管 - 偏压电阻器 100mA 50volts 3Pin 10Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| RN1311,LF | 制造商:Toshiba America Electronic Components 功能描述:X34 PB-F USM TRANSISTOR PD 100MW F 250MHZ (LF) - Tape and Reel |
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