型号: | RN1962 |
厂商: | Toshiba Corporation |
英文描述: | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
中文描述: | 东芝npn型晶体管硅外延型(厘进程) |
文件页数: | 2/7页 |
文件大小: | 272K |
代理商: | RN1962 |
相关PDF资料 |
PDF描述 |
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RN1962FE | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
RN1964 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
RN1964FE | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
RN1965 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
RN1965FE | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
相关代理商/技术参数 |
参数描述 |
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RN1962CT | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications |
RN1962FE | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
RN1962FS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
RN1962FS(TPL3) | 功能描述:开关晶体管 - 偏压电阻器 50mA 20volts 6Pin 10K x 10Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
RN1963 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |