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参数资料
| 型号： | RN1964 |
| 厂商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 东芝npn型晶体管硅外延型（厘进程） |
| 文件页数： | 1/7页 |
| 文件大小： | 272K |
| 代理商： | RN1964 |
RN1961~RN1966
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1961,RN1962,RN1963
RN1964,RN1965,RN1966
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Including two devices in US6 (ultra super mini type 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2961~RN2966
Equivalent Circuit and Bias Resistor Values
Equivalent Circuit
(Top View)
Maximum Ratings
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN1961~1966
V
CEO
50
V
RN1961~1964
10
Emitter-base voltage
RN1965, 1966
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
200
mW
Junction temperature
T
j
150
C
Storage temperature range
RN1961~1966
T
stg
55~150
C
*:
Total rating
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1B
Type No.
R1 (k
)
R2 (k
)
RN1961
4.7
4.7
RN1962
10
10
RN1963
22
22
RN1964
47
47
RN1965
2.2
47
RN1966
4.7
47
Unit: mm
相关PDF资料 |
PDF描述 |
|---|---|
| RN1964FE | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| RN1965 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1965FE | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| RN1966 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1966FE | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| RN1964CT | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications |
| RN1964FE | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| RN1964FS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| RN1964FS(TPL3) | 功能描述:开关晶体管 - 偏压电阻器 Polarity=NPNx2 4.7K x 4.7Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| RN1965 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
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