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参数资料
| 型号： | RN1964 |
| 厂商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 东芝npn型晶体管硅外延型（厘进程） |
| 文件页数： | 2/7页 |
| 文件大小： | 272K |
| 代理商： | RN1964 |
RN1961~RN1966
2001-06-07
2
Electrical Characteristics
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
―
V
CB
= 50V, I
E
= 0
―
―
100
Collector cut-off current
RN1961~1966
I
CEO
―
V
CE
= 50V, I
B
= 0
―
―
500
nA
RN1961
―
0.82
―
1.52
RN1962
―
0.38
―
0.71
RN1963
―
0.17
―
0.33
RN1964
―
V
EB
= 10V, I
C
= 0
0.082
―
0.15
RN1965
―
0.078
―
0.145
Emitter cut-off current
RN1966
I
EBO
―
V
EB
= 5V, I
C
= 0
0.074
―
0.138
mA
RN1961
―
30
―
―
RN1962
―
50
―
―
RN1963
―
70
―
―
RN1964
―
80
―
―
RN1965
―
80
―
―
DC current gain
RN1966
h
FE
―
V
CE
= 5V, I
C
= 10mA
80
―
―
―
Collector-emitter
saturation voltage
RN1961~1966
V
CE (sat)
―
I
C
= 5mA,
I
B
= 0.25mA
―
0.1
0.3
V
RN1961
―
1.1
―
2.0
RN1962
―
1.2
―
2.4
RN1963
―
1.3
―
3.0
RN1964
―
1.5
―
5.0
RN1965
―
0.6
―
1.1
Input voltage (ON)
RN1966
V
I (ON)
―
V
CE
= 0.2V, I
C
= 5mA
0.7
―
1.3
V
RN1961~1964
―
1.0
―
1.5
Input voltage (OFF)
RN1965, 1966
V
I (OFF)
―
V
CE
= 5V, I
C
= 0.1mA
0.5
―
0.8
V
Translation frequency
RN1961~1966
f
T
―
V
CE
= 10V, I
C
= 5mA
―
250
―
MHz
Collector output
capacitance
RN1961~1966
C
ob
―
V
CB
= 10V, I
E
= 0,
f = 1MHz
―
3
6
pF
RN1961
―
3.29
4.7
6.11
RN1962
―
7
10
13
RN1963
―
15.4
22
28.6
RN1964
―
32.9
47
61.1
RN1965
―
1.54
2.2
2.86
Input resistor
RN1966
R1
―
―
3.29
4.7
6.11
k
RN1961~1965
―
0.9
1.0
1.1
RN1965
―
0.0421 0.0468 0.0515
Resistor ratio
RN1966
R1/R2
―
―
0.09
0.1
0.11
―
相关PDF资料 |
PDF描述 |
|---|---|
| RN1964FE | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| RN1965 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1965FE | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| RN1966 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1966FE | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| RN1964CT | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications |
| RN1964FE | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| RN1964FS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| RN1964FS(TPL3) | 功能描述:开关晶体管 - 偏压电阻器 Polarity=NPNx2 4.7K x 4.7Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| RN1965 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
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