参数资料
型号: RN2209
厂商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
中文描述: 东芝晶体硅外延式进步党(厘进程)
文件页数: 1/5页
文件大小: 173K
代理商: RN2209
RN2207~RN2209
2001-06-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2207,RN2208,RN2209
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1207~RN1209
Equivalent Circuit and Bias Resistor Values
Maximum Ratings (Ta = 25
°°°°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
RN2207
6
RN2208
7
Emitter-base voltage
RN2209
VEBO
15
V
Collector current
IC
100
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
JEDEC
EIAJ
TOSHIBA
2-4E1A
Weight: 0.13g
Unit: mm
Type No.
R1 (k)R2 (k)
RN2207
10
47
RN2208
22
47
RN2209
47
22
相关PDF资料
PDF描述
RN2210 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
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RN2221 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2222 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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相关代理商/技术参数
参数描述
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