参数资料
型号: RN2210
厂商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
中文描述: 东芝晶体硅外延式进步党(厘进程)
文件页数: 5/5页
文件大小: 159K
代理商: RN2210
RN2210,RN2211
2001-06-07
5
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
相关PDF资料
PDF描述
RN2211 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2221 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2222 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2223 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2224 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
相关代理商/技术参数
参数描述
RN2210(F) 制造商:Toshiba America Electronic Components 功能描述:Trans Digital BJT PNP 50V 100mA 3-Pin Mini
RN2211 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2213 制造商:OHIO BUCKEYE 功能描述:
RN222 制造商:未知厂家 制造商全称:未知厂家 功能描述:Current-compensated Chokes
RN222-0.5-02-56M 功能描述:56mH @ 10kHz 2 Line Common Mode Choke Through Hole 500mA DCR 1.8 Ohm (Typ) 制造商:schaffner emc inc. 系列:RN 包装:托盘 零件状态:在售 滤波器类型:电源线 线路数:2 不同频率时的阻抗:- 电感 @ 频率:56mH @ 10kHz 额定电流(最大):500mA 直流电阻(DCR)(最大):1.8 欧姆(标准) 额定电压 - DC:- 额定电压 - AC:300V 工作温度:-40°C ~ 100°C 等级:- 认可:ENEC, UR, VDE 特性:- 安装类型:通孔 大小/尺寸:1.220" 长 x 0.709" 宽(31.00mm x 18.00mm) 高度(最大值):1.165"(29.60mm) 封装/外壳:垂直式,4 PC 引脚 标准包装:15