参数资料
型号: RPT-37PB3FN
厂商: Rohm Semiconductor
文件页数: 1/3页
文件大小: 0K
描述: PHOTOTRANSISTOR 800NM 3MM
标准包装: 2,000
系列: *
电压 - 集电极发射极击穿(最大): 32V
电流 - 集电极 (Ic)(最大): 30mA
电流 - 暗 (Id)(最大): 500nA
波长: 800nm
视角: 72°
功率 - 最大: 150mW
安装类型: 通孔
方向: 顶视图
封装/外壳: T-1
产品目录页面: 2791 (CN2011-ZH PDF)
其它名称: 511-1358
RPT-37PB3F
RPT-37PB3F-ND
RPT-37PB3FF
Phototransistor, top view type
RPT-37PB3F
The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect
from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.
It is possible to distinguish the polarity by the shape of ramp type.
? Applications
Optical control equipment
? Dimensions (Units : mm)
Receiver for sensors
φ 3.8 ± 0.3
φ 3.1 ± 0.2
Notes :
1. Unspecfied tolerance shall be ± 0.2.
2. Measurement in the bracket are that of
lead pin at base the mold.
? Features
1) High sensitivity.
2) Almost no effect from stray light.
2 ?
4 ? 0.6
0.5
1
2
3. Dimension in parenthesis are show for
reference.
(2.5)
Internal connection diagram
? Absolute maximum ratings (Ta = 25 ? C)
1
Emitter
2
Collector
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Symbol
V CEO
V ECO
I C
P C
Topr
Tstg
Limits
32
5
30
150
? 25~ + 85
? 30~ + 85
Unit
V
V
mA
mW
° C
° C
? Electrical and optical characteristics (Ta = 25 ? C)
Parameter
Light current
Dark current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Half-angle
Response time
Symbol
I C
I CEO
λ P
V CE(sat)
θ 1 / 2
t r ·t f
Min.
2.0
?
?
?
?
?
Typ.
?
?
800
?
± 36
10
Max.
?
0.5
?
0.4
?
?
Unit
mA
μ A
nm
V
deg
μ s
Conditions
V CE = 5V, E = 500L X
V CE = 10V(Black box)
?
I C = 1mA, E = 500L X
?
V CC = 5V, I C = 1mA, R L = 100 Ω
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
1/2
2010.07 - Rev.A
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