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参数资料
| 型号： | RSB6.8F2T106 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | DIODE ZENER BIDIR 200MW UMD3 |
| 产品目录绘图： | Zener Diode UMD3 |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 3.5V |
| 电压 - 击穿： | 5.78V |
| 电极标记： | 2 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | UMD3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1649 (CN2011-ZH PDF) |
| 其它名称： | RSB6.8F2T106DKR |
RSB6.8F2
Diodes
Bi-Directional Zener Diodes
RSB6.8F2
Outline
Dimensions (Unit : mm)
RSB6.8F2 is a bi-directional zener diode having two
zeners confronted in one package, aimed to absorb the
surge in plus and minus directions arising from the signal
line in mobile phone, consumer electronics such as PC,
and automotive applications.
In general, two pieces of zener diodes are used as ESD
protector to absorb the surge in +/ - directions. Paying
0.3±0.1
(3)
6W
0.15±0.05
0~0.1
attention to this point and using its original technology,
ROHM succeeded to incorporate 2 zeners in one die /
(2)
(1)
package for benefit of space-saving on the circuit board.
Features
1) Absorption of plus & minus surge with one package.
2) Decrease of components and space-saving on the
circuit board.
Absolute maximum ratings (Ta=25 C)
Structure
(3)
(2)
(1)
0.65 0.65
1.3±0.1
2.0±0.2
0.6 0.3
0.9±0.1
Parameter
Power dissipation (*1)
Junction temperature
Operation temperature range
Symbol
Pd
Tj
Tstg
Limits
200
150
-55 to +150
Unit
mW
(*1) Total of 2 elements
Electrical characteristics Ta=25 C (Rating of per diode)
Parameter
Zener voltage
Reverse current
Capacitance between terminals
Symbol
V z
I R
Ct
Min.
5.780
-
-
Typ.
-
-
30
Max.
7.820
0.5
-
Unit
V
μ A
pF
Conditions
I F =1mA
V R =3.5V
V R =0V , f=1MHz
Zener voltage to be measured at 40ms after current starting to apply.
1/1
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