参数资料
型号: RW1C020UNT2R
厂商: Rohm Semiconductor
文件页数: 1/12页
文件大小: 0K
描述: MOSFET N-CH 20V 2A WEMT6
标准包装: 8,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 105 毫欧 @ 2A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 1mA
闸电荷(Qg) @ Vgs: 2nC @ 4.5V
输入电容 (Ciss) @ Vds: 180pF @ 10V
功率 - 最大: 700mW
安装类型: 表面贴装
封装/外壳: 6-WEMT
供应商设备封装: 6-WEMT
包装: 带卷 (TR)
RW1C020UN
Nch 20V 2A Power MOSFET
l Outline
Datasheet
V DSS
R DS(on) (Max.)
I D
P D
20V
105m W
2A
0.7W
WEMT6
(1)
(2)
(3)
(6)
(5)
(4)
l Features
1) Low on - resistance.
2) 1.5V Drive.
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (WEMT6).
5) Pb-free lead plating ; RoHS compliant
l Inner circuit
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
* 1 ESD PROTECTION DIODE
* 2 BODY DIODE
l Packaging specifications
Packaging
Taping
l Application
Reel size (mm)
180
DC/DC converters
Type
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
8
8,000
T2R
XK
l Absolute maximum ratings (T a = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
www.rohm.com
? 2013 ROHM Co., Ltd. All rights reserved.
1/11
Symbol
V DSS
I D *1
I D,pulse *2
V GSS
P D *3
P D *4
T j
T stg
Value
20
? 2
? 6
? 10
0.7
0.4
150
- 55 to + 150
Unit
V
A
A
V
W
W
°C
°C
2013.02 - Rev.B
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