参数资料
型号: RW1C020UNT2R
厂商: Rohm Semiconductor
文件页数: 8/12页
文件大小: 0K
描述: MOSFET N-CH 20V 2A WEMT6
标准包装: 8,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 105 毫欧 @ 2A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 1mA
闸电荷(Qg) @ Vgs: 2nC @ 4.5V
输入电容 (Ciss) @ Vds: 180pF @ 10V
功率 - 最大: 700mW
安装类型: 表面贴装
封装/外壳: 6-WEMT
供应商设备封装: 6-WEMT
包装: 带卷 (TR)
RW1C020UN
l Electrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Data Sheet
Fig.16 Static Drain-Source On-State
Resistance vs. Drain Current(III)
1000
V GS = 4.5V
Pulsed
T a =125oC
T a =75oC
T a =25oC
T a = - 25oC
1000
V GS = 2.5V
Pulsed
T a =125oC
T a =75oC
T a =25oC
T a = - 25oC
100
100
10
0.01
0.1
1
10
10
0.01
0.1
1
10
Drain Current : I D [A]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Drain Current : I D [A]
Fig.18 Static Drain - Source On - State
Resistance vs. Drain Current(V)
1000
100
V GS = 1.8V
Pulsed
T a =125oC
T a =75oC
T a =25oC
T a = - 25oC
1000
100
V GS = 1.5V
Pulsed
T a =125oC
T a =75oC
T a =25oC
T a = - 25oC
10
0.01
0.1
1
10
10
0.01
0.1
1
10
Drain Current : I D [A]
Drain Current : I D [A]
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8/11
2013.02 - Rev.B
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