参数资料
型号: S-80857CNNB-B9I-T2G
元件分类: 电源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4
封装: LEAD FREE, SC-82AB, 4 PIN
文件页数: 19/59页
文件大小: 579K
代理商: S-80857CNNB-B9I-T2G
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.5.0_00
26
Seiko Instruments Inc.
VDD
OUT
(
VDET) Max.
(
VDET) Min.
Detection voltage range
Detection voltage
(
+VDET) Max.
(
+VDET) Min.
Release voltage range
VDD
Release voltage
OUT
Figure 21 Detection Voltage (CMOS Output Products)
Figure 22 Release Voltage (CMOS Output Products)
Remark
Although the detection voltage and release voltage overlap in the range of 1.514 V to 1.530 V,
+VDET is always larger than VDET.
2. Hysteresis Width (VHYS)
The hysteresis width is the voltage difference between the detection voltage and the release voltage (The
voltage at point B
The voltage at point A =VHYS in Figure 18). The existence of the hysteresis width
prevents malfunction caused by noise on input signal.
3. Through-type Current
The through-type current refers to the current that flows instantaneously at the time of detection and release
of a voltage detector. The through-type current is large in CMOS output products, small in Nch open-drain
output products.
4. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 23), taking a CMOS active
low product for example, the through-type current which is generated when the output goes from low to high
(release) causes a voltage drop equal to [through-type current]
×[input resistance] across the resistor. When
the input voltage drops below the detection voltage (
VDET) as a result, the output voltage goes to low level.
In this state, the through-type current stops and its resultant voltage drop disappears, and the output goes
from low to high. A through-type current is again generated, a voltage drop appears, and repeating the
process finally induces oscillation.
OUT
VSS
VDD
RB
RA
VIN
S-808xxCL
Figure 23 An Example for Bad Implementation of Input Voltage Divider
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相关代理商/技术参数
参数描述
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