参数资料
型号: S-80857CNNB-B9I-T2G
元件分类: 电源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4
封装: LEAD FREE, SC-82AB, 4 PIN
文件页数: 20/59页
文件大小: 579K
代理商: S-80857CNNB-B9I-T2G
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.5.0_00
S-808xxC Series
Seiko Instruments Inc.
27
Electrical Characteristics for Customized Products
1. S-80824KNUA-D2BT2x, S-80824KNY-n-G
Table 18
(Ta
= 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
*1
VDET
2.295
2.400
*2
2.505
V
1
Release voltage
+VDET
4.300
4.400
4.500
V
1
Current consumption
ISS
VDD
=6.0 V
0.8
2.4
μA
2
Operating voltage
VDD
0.95
10.0
V
1
Output current
IOUT
VDD
= 0.95 V 0.03
0.24
mA
3
Output transistor,
Nch, VDS
= 0.5 V V
DD
= 1.2 V
0.23
0.50
mA
3
Leakage current
ILEAK
Output transistor,
Nch, VDD
= 10.0 V, VDS = 10.0 V
0.1
μA
3
Response time
tPLH
60
μs
1
Detection voltage
temperature
coefficient
*3
DET
V
Ta
V
Δ
Δ
Ta
= 40 to 85 °C
±100
±350 ppm/°C
1
*1.
VDET: Actual detection voltage value
*2.
Specified detection voltage value (
VDET(S))
*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[]
()
[]
[] 1000
C
ppm/
V
Ta
V
Typ.
V
C
mV/
Ta
V
DET
DET(S)
DET
÷
°
Δ
Δ
×
=
°
Δ
Δ
3
*
2
*
*1
*1.
Temperature change of the detection voltage
*2.
Specified detection voltage
*3.
Detection voltage temperature coefficient
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