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| 型号： | S-8333ACIC-T8T1G |
| 元件分类： | 稳压器 |
| 英文描述： | 0.16 A SWITCHING CONTROLLER, 1133 kHz SWITCHING FREQ-MAX, PDSO8 |
| 封装： | LEAD FREE, TSSOP-8 |
| 文件页数： | 7/43页 |
| 文件大小： | 588K |
| 代理商： | S-8333ACIC-T8T1G |
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STEP-UP, FOR LCD BIAS SUPPLY, 1-CHANNEL, PWM CONTROL SWITCHING REGULATOR CONTROLLER
Rev.2.3_00
S-8333 Series
Seiko Instruments Inc.
15
4. External transistor
A bipolar (NPN) or enhancement (N-channel) MOS FET transistor can be used as the external capacitor.
4. 1 Bipolar (NPN) type
The driving capability when the output current is increased by using a bipolar transistor is determined by hFE
and Rb of the bipolar transistor. Figure 11 shows a peripheral circuit.
Nch
Pch
Rb
VIN
IPK
EXT
Cb
2200 pF
1 k
Figure 11 External Transistor Periphery
1 k
is recommended for Rb. Actually, calculate the necessary base current (Ib) from hFE of the bipolar
transistor as follows and select an Rb value lower than this.
Ib
=
hFE
IPK
Rb
=
Ib
VIN
0.7
IEXTH
0.4
A small Rb increases the output current, but the efficiency decreases. Actually, a pulsating current flows and
a voltage drop occurs due to the wiring capacitance. Determine the optimum value by experiment.
A speed-up capacitor (Cb) connected in parallel with Rb resistance as shown in Figure 11 decreases the
switching loss and improves the efficiency.
Select Cb by observing the following equation.
7
.
0
f
R
2
1
C
OSC
b
π
≤
However, in practice, the optimum Cb value also varies depending on the characteristics of the bipolar
transistor employed. Therefore, determine the optimum value of Cb by experiment.
4. 2 Enhancement MOS FET type
Use an Nch power MOS FET. For high efficiency, using a MOS FET with a low ON resistance (RON) and
small input capacitance (CISS) is ideal, however, ON resistance and input capacitance generally share a
trade-off relationship. The ON resistance is efficient in a range in which the output current is relatively great
during low-frequency switching, and the input capacitance is efficient in a range in which the output current
is middling during high-frequency switching.
Select a MOS FET whose ON resistance and input
capacitance are optimal depending on the usage conditions.
The input voltage (VIN) is supplied for the gate voltage of the MOS FET, so select a MOS FET with a gate
withstanding voltage that is equal to the maximum usage value of the input voltage or higher and a drain
withstanding voltage that is equal to the amount of the output voltage (VOUT) and diode voltage (VD) or
higher.
If a MOS FET with a threshold that is near the UVLO detection voltage is used, a large current may flow,
stopping the output voltage from rising and possibly generating heat in the worst case. Select a MOS FET
with a threshold that is sufficiently lower than the UVLO detection voltage value.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S-8333CCBC-T8T1U | 功能描述:IC REG CTRLR BOOST 8TSSOP 制造商:ablic u.s.a. inc. 系列:- 包装:剪切带（CT） 零件状态:在售 输出类型:晶体管驱动器 功能:升压 输出配置:正 拓扑:升压 输出数:1 输出阶段:1 电压 - 电源（Vcc/Vdd）:1.8 V ~ 6 V 频率 - 开关:280kHz ~ 1.08MHz 占空比（最大）:0.89 同步整流器:无 时钟同步:无 串行接口:- 控制特性:限流，频率控制 工作温度:-40°C ~ 85°C（TA） 封装/外壳:8-TSSOP（0.173"，4.40mm 宽） 供应商器件封装:8-TSSOP 标准包装:1 |
| S-8335A120FT | 功能描述:开关变换器、稳压器与控制器 Dual Pos/Neg 3 Ch RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| S-8335A120FT-TB-G | 功能描述:开关变换器、稳压器与控制器 Dual Pos/Neg 3 Ch RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| S-8335A160FT | 功能描述:开关变换器、稳压器与控制器 Dual Pos/Neg 3 Ch RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| S-8335A160FT-TB-G | 功能描述:开关变换器、稳压器与控制器 Dual Pos/Neg 3 Ch RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
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