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参数资料
| 型号： | S-93C56BD0I-I8T1G |
| 元件分类： | PROM |
| 英文描述： | 128 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封装： | LEAD FREE, SNT-8 |
| 文件页数： | 13/48页 |
| 文件大小： | 803K |
| 代理商： | S-93C56BD0I-I8T1G |
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CMOS SERIAL E2PROM
S-93C46B/56B/66B
Rev.5.0_00
Seiko Instruments Inc.
20
Write Disable Function when Power Supply Voltage is Low
The S-93C46B/56B/66B provides a built-in detector to detect a low power supply voltage and disable
writing. When the power supply voltage is low or at power application, the write instructions (WRITE,
ERASE, WRAL, and ERAL) are cancelled, and the write disable state (EWDS) is automatically set. The
detection voltage is 1.75 V typ., the release voltage is 2.05 V typ., and there is a hysteresis of about 0.3 V
(refer to Figure 21). Therefore, when a write operation is performed after the power supply voltage has
dropped and then risen again up to the level at which writing is possible, a write enable instruction (EWEN)
must be sent before a write instruction (WRITE, ERASE, WRAL, or ERAL) is executed.
When the power supply voltage drops during a write operation, the data being written to an address at that
time is not guaranteed.
Release voltage (
+VDET)
2.05 V Typ.
Power supply voltage
Hysteresis
About 0.3 V
Detection voltage (
VDET)
1.75 V Typ.
Write instruction cancelled
Write disable state (EWDS) automatically set
Figure 21 Operation when Power Supply Voltage is Low
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S-93C56BD0I-I8T1U | 制造商:SII 制造商全称:Seiko Instruments Inc 功能描述:3-WIRE SERIAL E2PROM |
| S-93C56BD0I-J8T1 | 制造商:Seiko Instruments Inc (SII) 功能描述: |
| S-93C56BD0I-J8T1G | 功能描述:电可擦除可编程只读存储器 2K (128X16) Hi-Speed RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| S-93C56BD0I-J8T1U | 制造商:SII 制造商全称:Seiko Instruments Inc 功能描述:3-WIRE SERIAL E2PROM |
| S-93C56BD0I-J8T2G | 制造商:SII 制造商全称:Seiko Instruments Inc 功能描述:CMOS SERIAL E2PROM |
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